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MC74VHC1G32_14 Datasheet, PDF (3/6 Pages) ON Semiconductor – Single 2-Input OR Gate | |||
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MC74VHC1G32
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
TA = 255C
TA v 855C *555C to 1255C
(V) Min Typ Max Min Max Min
Max Unit
VIH Minimum HighâLevel
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
VIL
Maximum LowâLevel
Input Voltage
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
VOH Minimum HighâLevel
VIN = VIH or VIL
2.0 1.9 2.0
1.9
1.9
V
Output Voltage
IOH = *50 mA 3.0 2.9 3.0
2.9
2.9
VIN = VIH or VIL
4.5 4.4 4.5
4.4
4.4
VIN = VIH or VIL
IOH = *4 mA 3.0
IOH = *8 mA 4.5
2.58
3.94
2.48
2.34
3.80
3.66
VOL Maximum LowâLevel
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
2.0
IOL = 50 mA 3.0
4.5
0.0 0.1
0.1
0.0 0.1
0.1
0.0 0.1
0.1
0.1
V
0.1
0.1
VIN = VIH or VIL
IOL = 4 mA 3.0
IOL = 8 mA 4.5
0.36
0.44
0.52
0.36
0.44
0.52
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
$0.1
$1.0
$1.0 mA
ICC Maximum Quiescent
VIN = VCC or GND
5.5
1.0
10
40
mA
Supply Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà TA = 25°C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Test Conditions
Min Typ Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPLH,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPHL
Maximum Propagation
Delay,
Input A or B to Y
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.8 7.9
6.1 11.4
3.7 5.5
4.4 7.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CIN MaximumInput
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Capacitance
5.5 10
TA ⤠85°C â55 ⤠TA ⤠125°C
Min Max Min
Max Unit
9.5
11.5 ns
13.0
15.5
6.5
8.0
8.5
10.0
10
10
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 6)
11
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noâload dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
http://onsemi.com
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