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MC74VHC1G126_15 Datasheet, PDF (3/6 Pages) ON Semiconductor – Noninverting 3-State Buffer
MC74VHC1G126
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
TA = 25°C
TA ≤ 85°C −55 ≤ TA ≤ 125°C
(V) Min Typ Max Min Max Min
Max Unit
VIH Minimum High−Level
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
VIL
Maximum Low−Level
Input Voltage
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
VOH Minimum High−Level
VIN = VIH or VIL
2.0 1.9 2.0
1.9
1.9
V
Output Voltage
IOH = −50 mA
3.0 2.9 3.0
2.9
2.9
VIN = VIH or VIL
4.5 4.4 4.5
4.4
4.4
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
VOL Maximum Low−Level
VIN = VIH or VIL
2.0
Output Voltage
IOL = 50 mA
3.0
VIN = VIH or VIL
4.5
0.0 0.1
0.1
0.0 0.1
0.1
0.0 0.1
0.1
0.1
V
0.1
0.1
VIN = VIH or VIL
IOL = 4 mA
3.0
IOL = 8 mA
4.5
0.36
0.44
0.36
0.44
V
0.52
0.52
IOZ Maximum 3−State
Leakage Current
VIN = VIH or VIL
5.5
VOUT = VCC or GND
±0.2
±2.5
5
±2.5 mA
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0 mA
ICC Maximum Quiescent
VIN = VCC or GND
5.5
Supply Current
1.0
20
40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA = 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
Maximum Propagation
Delay, Input A to Y
(Figures 3. and 5.)
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.5 8.0
6.4 11.5
3.5 5.5
4.5 7.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZH
Maximum Output Enable
Time, Input OE to Y
(Figures 4. and 5.)
VCC = 3.3 ± 0.3 V
RL = 1000 W
VCC = 5.0 ± 0.5 V
RL = 1000 W
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.5 8.0
6.4 11.5
3.5 5.1
4.5 7.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHZ
Maximum Output Disable
Time, Input OE to Y
(Figures 4. and 5.)
VCC = 3.3 ± 0.3 V
RL = 1000 W
VCC = 5.0 ± 0.5 V
RL = 1000 W
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
6.5 9.7
8.0 13.2
4.8 6.8
7.0 8.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CIN MaximumInput
Capacitance
4.0 10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ COUT Maximum 3−State Output
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Capacitance (Output in
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ High Impedance State)
TA ≤ 85°C −55 ≤ TA ≤ 125°C
Min Max Min
Max Unit
9.5
12.0 ns
13.0
16.0
6.5
8.5
8.5
10.5
9.5
11.5 ns
13.0
15.0
6.0
8.5
8.0
10.5
11.5
14.5 ns
15.0
18.0
8.0
10.0
10.0
12.0
10
10
pF
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 5)
8.0
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.
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