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MC74VHC1G126_07 Datasheet, PDF (3/6 Pages) ON Semiconductor – Noninverting 3−State Buffer | |||
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MC74VHC1G126
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
TA = 25°C
TA ⤠85°C â55 ⤠TA ⤠125°C
(V) Min Typ Max Min Max Min
Max Unit
VIH Minimum HighâLevel
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
VIL Maximum LowâLevel
Input Voltage
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
VOH Minimum HighâLevel
VIN = VIH or VIL
2.0 1.9 2.0
1.9
1.9
V
Output Voltage
IOH = â50 mA
3.0 2.9 3.0
2.9
2.9
VIN = VIH or VIL
4.5 4.4 4.5
4.4
4.4
VIN = VIH or VIL
IOH = â4 mA
IOH = â8 mA
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
VOL Maximum LowâLevel
VIN = VIH or VIL
2.0
0.0 0.1
0.1
Output Voltage
IOL = 50 mA
3.0
0.0 0.1
0.1
VIN = VIH or VIL
4.5
0.0 0.1
0.1
0.1
V
0.1
0.1
VIN = VIH or VIL
IOL = 4 mA
3.0
IOL = 8 mA
4.5
0.36
0.44
0.36
0.44
V
0.52
0.52
IOZ Maximum 3âState
Leakage Current
VIN = VIH or VIL
5.5
VOUT = VCC or GND
±0.2
±2.5
5
±2.5 mA
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
±1.0 mA
ICC Maximum Quiescent
VIN = VCC or GND
5.5
1.0
20
40
mA
Supply Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà TA = 25°C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Test Conditions
Min Typ Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPLH,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPHL
Maximum Propagation
Delay, Input A to Y
(Figures 3. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
4.5 8.0
6.4 11.5
3.5 5.5
4.5 7.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPZL,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPZH
Maximum Output Enable
Time, Input OE to Y
(Figures 4. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1000 W
CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1000 W
CL = 50 pF
4.5 8.0
6.4 11.5
3.5 5.1
4.5 7.1
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPLZ,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPHZ
Maximum Output Disable
Time, Input OE to Y
(Figures 4. and 5.)
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1000 W
CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1000 W
CL = 50 pF
6.5 9.7
8.0 13.2
4.8 6.8
7.0 8.8
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CIN Maximum Input
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Capacitance
4.0 10
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ COUT Maximum 3âState Output
6.0
Capacitance (Output in
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ High Impedance State)
TA ⤠85°C â55 ⤠TA ⤠125°C
Min Max Min
Max Unit
9.5
12.0 ns
13.0
16.0
6.5
8.5
8.5
10.5
9.5
11.5 ns
13.0
15.0
6.0
8.5
8.0
10.5
11.5
14.5 ns
15.0
18.0
8.0
10.0
10.0
12.0
10
10
pF
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Note 5)
8.0
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noâload dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
http://onsemi.com
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