MC74VHC1G125_11 Datasheet, PDF (3/6 Pages) ON Semiconductor – Noninverting 3-State Buffer

MC74VHC1G125
DC ELECTRICAL CHARACTERISTICS
Symbol
V_IH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
V_IL Maximum Low−Level
Input Voltage
V_OH Minimum High−Level
Output Voltage
V_IN = V_IH or V_IL
V_OL Maximum Low−Level
Output Voltage
V_IN = V_IH or V_IL
I_OZ Maximum 3−State
Leakage Current
I_IN
Maximum Input
Leakage Current
V_IN = V_IH or V_IL
I_OH = −50 mA
V_IN = V_IH or V_IL
I_OH = −4 mA
I_OH = −8 mA
V_IN = V_IH or V_IL
I_OL = 50 mA
V_IN = V_IH or V_IL
I_OL = 4 mA
I_OL = 8 mA
V_IN = V_IH or V_IL
V_OUT = V_CC or GND
V_IN = 5.5 V or GND
V_CC
T_A = 25°C
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
(V) Min Typ Max Min Max Min
Max _Unit
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
2.0 1.9 2.0
1.9
1.9
V
3.0 2.9 3.0
2.9
2.9
4.5 4.4 4.5
4.4
4.4
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
2.0
0.0 0.1
0.1
3.0
0.0 0.1
0.1
4.5
0.0 0.1
0.1
0.1
V
0.1
0.1
V
3.0
0.36
0.44
0.52
4.5
0.36
0.44
0.52
5.5
±0.2
$2.5
$2.5 mA
5
0 to
±0.1
±1.0
$1.0 mA
5.5
I_CC Maximum Quiescent
V_IN = V_CC or GND
5.5
Supply Current
1.0
20
40
mA
AC ELECTRICAL CHARACTERISTICS C_load = 50 pF, Input t_r = t_f = 3.0 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA = 25°C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Test Conditions
Min Typ Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHL
Maximum Propagation
Delay, Input A to Y
(Figures 3 and 4)
V_CC = 3.3 ± 0.3 V
V_CC = 5.0 ± 0.5 V
C_L = 15 pF
C_L = 50 pF
C_L = 15 pF
C_L = 50 pF
4.5 8.0
6.4 11.5
3.5 5.5
4.5 7.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t_PZH
Maximum Output
Enable Time,
Input OE to Y
(Figures 4 and 5)
V_CC = 3.3 ± 0.3 V
R_L = 1000 W
V_CC = 5.0 ± 0.5 V
R_L = 1000 W
C_L = 15 pF
C_L = 50 pF
C_L = 15 pF
C_L = 50 pF
4.5 8.0
6.4 11.5
3.5 5.1
4.5 7.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPHZ
Maximum Output
Disable Time,
Input OE to Y
(Figures 4 and 5)
V_CC = 3.3 ± 0.3 V
R_L 1000 W
V_CC = 5.0 ± 0.5 V
R_L = 1000 W
C_L = 15 pF
C_L = 50 pF
C_L = 15 pF
C_L = 50 pF
6.5 9.7
8.0 13.2
4.8 6.8
7.0 8.8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{CIN MaximumInput}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Capacitance
4.0 10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{COUT Maximum 3−State Output}
6.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Capacitance (Output in}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{High Impedance State)}
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
Min Max Min
Max _Unit
9.5
12.0 ns
13.0
16.0
6.5
8.5
8.5
10.5
9.5
11.5 ns
13.0
15.0
6.0
8.5
8.0
10.5
11.5
14.5 ns
15.0
18.0
8.0
10.0
10.0
12.0
10
10
pF
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 5)
8.0
pF
5. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
http://onsemi.com
3