MC74VHC1G07_11 Datasheet, PDF (3/6 Pages) ON Semiconductor – Single Non-Inverting Buffer with Open Drain Output

MC74VHC1G07
DC ELECTRICAL CHARACTERISTICS
Symbol
V_IH
Parameter
Minimum
High−Level
Input Voltage
Test Conditions
V_IL
Maximum
Low−Level
Input Voltage
V_OL
I_LKG
I_IN
Maximum
Low−Level
Output Voltage
V_IN = V_IH or V_IL
Z−State Output
Leakage Current
Maximum Input
Leakage Current
V_IN = V_IL
I_OL = 50 mA
V_IN = V_IL
I_OL = 4 mA
I_OL = 8 mA
V_IN = V_IH
V_OUT = V_CC or GND
V_IN = 5.5 V or GND
I_CC Maximum
V_IN = V_CC or GND
Quiescent Supply
Current
I_OFF Power Off−Output V_OUT = 5.5 V
Leakage Current V_IN = 5.5 V
V_CC
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
2.0
3.0
4.5
3.0
4.5
5.5
0 to 5.5
5.5
0
T_A = 255C
Min Typ Max
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
0.0 0.1
0.0 0.1
0.0 0.1
0.36
0.36
$0.25
$0.1
1.0
0.25
T_A v 855C
Min Max
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
0.1
0.1
0.1
*555C v T_A v 1255C
Min
Max Unit
1.5
V
2.1
3.15
3.85
0.5
V
0.9
1.35
1.65
0.1
V
0.1
0.1
0.44
0.44
$2.5
0.52
0.52
$5.0
mA
$1.0
$1.0
mA
20
40
mA
2.5
5
mA
AC ELECTRICAL CHARACTERISTICS Input t_r = t_f = 3.0 ns
T_A = 255C
T_A v 855C *555C v T_A v 1255C
Symbol
Parameter
Test Conditions
Min Typ Max Min Max
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tPZL Maximum Output VCC = 3.3 $ 0.3 V CL = 15 pF}
5.0 7.1
8.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Enable Time,}
R_L = R_I = 500 W C_L = 50 pF
7.5 10.6
12.0
Input A to Y
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC=5.0$0.5V CL=15pF}
3.8 5.5
6.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ R_L=R_I=500W C_L=50pF
5.3 7.5
8.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t_PLZ Maximum Output V_CC = 3.3 $ 0.3 V C_L = 50 pF
7.5 10.6
12.0
Disable Time
R_L = R_I = 500 W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC = 5.0 $ 0.5 V CL = 50 pF}
5.3 7.5
8.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RL = RI = 500 W}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CIN MaximumInput
Capacitance
4
10
10
Max Unit
10.0
ns
14.5
8.0
10.0
14.5
ns
10.0
10
pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Typical @ 25°C, VCC = 5.0 V}
C_PD Power Dissipation Capacitance (Note 6)
18
pF
6. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
http://onsemi.com
3