MC74VHC1G04_07 Datasheet, PDF (3/6 Pages) ON Semiconductor – Single Inverter

MC74VHC1G04
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
V_CC
T_A = 255C
T_A v 855C *555C to 1255C
(V) Min Typ Max Min Max Min
Max Unit
V_IH
Minimum High−Level
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
V_IL
Maximum Low−Level
Input Voltage
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
V_OH
Minimum High−Level V_IN = V_IH or V_IL
2.0 1.9 2.0
1.9
1.9
V
Output Voltage
I_OH = *50 mA 3.0 2.9 3.0
2.9
2.9
V_IN = V_IH or V_IL
4.5 4.4 4.5
4.4
4.4
V_IN = V_IH or V_IL
I_OH = *4 mA 3.0
I_OH = *8 mA 4.5
2.58
3.94
2.48
2.34
3.80
3.66
V_OL
Maximum Low−Level V_IN = V_IH or V_IL
2.0
Output Voltage
I_OL = 50 mA 3.0
V_IN = V_IH or V_IL
4.5
V_IN = V_IH or V_IL
I_OL = 4 mA 3.0
I_OL = 8 mA 4.5
I_IN
Maximum Input
Leakage Current
V_IN = 5.5 V or GND
0 to
5.5
0.0 0.1
0.0 0.1
0.0 0.1
0.36
0.36
$0.1
0.1
0.1
0.1
0.44
0.44
$1.0
0.1
V
0.1
0.1
0.52
0.52
$1.0 mA
I_CC
Maximum Quiescent V_IN = V_CC or GND
5.5
1.0
10
40
mA
Supply Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ t_PHL
Parameter
Maximum
Propagation Delay,
Input A to Y
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _CIN
Maximum Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Capacitance
Test Conditions
V_CC = 3.3 ± 0.3 V C_L = 15 pF
C_L = 50 pF
V_CC = 5.0 ± 0.5 V C_L = 15 pF
C_L = 50 pF
T_A = 25°C
Min Typ Max
4.5 7.1
6.4 10.6
3.5 5.5
4.5 7.5
4
10
T_A ≤ 85°C −55 ≤ T_A ≤ 125°C
Min Max Min
Max _Unit
8.5
10.0
ns
12.0
14.5
6.5
8.0
8.5
10.0
10
10
pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 6)
8.0
pF
6. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
http://onsemi.com
3