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MC74VHC1G00 Datasheet, PDF (3/8 Pages) ON Semiconductor – 2-Input NAND Gate | |||
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MC74VHC1G00
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
TA = 25°C
TA ⤠85°C
TA ⤠125°C
(V) Min Typ Max Min Max Min Max Unit
VIH
Minimum HighâLevel
Input Voltage
2.0 1.5
3.0 2.1
4.5 3.15
5.5 3.85
1.5
1.5
V
2.1
2.1
3.15
3.15
3.85
3.85
VIL
Maximum LowâLevel
Input Voltage
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
5.5
1.65
1.65
1.65
VOH
Minimum HighâLevel
VIN = VIH or VIL
2.0 1.9 2.0
1.9
1.9
V
Output Voltage
IOH = â50µA
3.0 2.9 3.0
2.9
2.9
VIN = VIH or VIL
4.5 4.4 4.5
4.4
4.4
VIN = VIH or VIL
IOH = â4mA
IOH = â8mA
3.0 2.58
4.5 3.94
V
2.48
2.34
3.80
3.66
VOL
Maximum LowâLevel
VIN = VIH or VIL
2.0
0.0 0.1
0.1
0.1
V
Output Voltage
IOL = 50µA
3.0
0.0 0.1
0.1
0.1
VIN = VIH or VIL
4.5
0.0 0.1
0.1
0.1
VIN = VIH or VIL
IOL = 4mA
3.0
IOL = 8mA
4.5
V
0.36
0.44
0.52
0.36
0.44
0.52
IIN
Maximum Input
Leakage Current
VIN = 5.5V or GND
0 to
5.5
±0.1
±1.0
±1.0 µA
ICC
Maximum Quiescent
VIN = VCC or GND
5.5
2.0
20
40 µA
Supply Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0ns)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà TA = 25°C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Test Conditions
Min Typ Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPLH,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPHL
Maximum Propogation
Delay,
Input A or B to Y
VCC = 3.0 ± 0.3V
VCC = 5.0 ± 0.5V
CL = 15 pF
CL = 50 pF
CL = 15 pF
CL = 50 pF
4.5 7.9
5.6 11.4
3.0 5.5
3.8 7.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CIN
Maximum Input
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Capacitance
5.5 10
TA ⤠85°C
Min Max
9.5
13.0
6.5
8.5
10
TA ⤠125°C
Min Max Unit
11.0 ns
15.5
8.0
10.0
10 pF
Typical @ 25°C, VCC = 5.0V
CPD
Power Dissipation Capacitance (Note 1.)
10
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noâload dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
http://onsemi.com
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