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MC74LVX14_14 Datasheet, PDF (3/6 Pages) ON Semiconductor – Hex Schmitt Inverter
MC74LVX14
CAPACITIVE CHARACTERISTICS
TA = 25°C
TA = −40 to 85°C
Symbol
Parameter
Min Typ Max Min
Max
Unit
Cin Input Capacitance
4
10
10
pF
CPD Power Dissipation Capacitance (Note 2)
21
pF
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 6 (per buffer). CPD is used to determine the
no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 3.3 V, Measured in SOIC Package)
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP Quiet Output Maximum Dynamic VOL
0.3
0.5
V
VOLV Quiet Output Minimum Dynamic VOL
−0.3 −0.5
V
VIHD Minimum High Level Dynamic Input Voltage
2.0
V
VILD Maximum Low Level Dynamic Input Voltage
0.9
V
A
50%
O
tPLH
50% VCC
VCC
GND
tPHL
Figure 2. Switching Waveforms
DEVICE
UNDER
TEST
OUTPUT
TEST POINT
CL*
*Includes all probe and jig capacitance
Figure 3. Test Circuit
ORDERING INFORMATION
Device
Package
Shipping†
MC74LVX14DR2G
SOIC−14 NB
(Pb−Free)
2500 Tape & Reel
MC74LVX14DTR2G
TSSOP−14
(Pb−Free)
2500 Tape & Reel
NLV74LVX14DTR2G*
TSSOP−14
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
http://onsemi.com
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