MC74LVX132_14 Datasheet, PDF (3/7 Pages) ON Semiconductor – Quad 2-Input NAND Schmitt Trigger

MC74LVX132
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
V_CC
T_A = 25°C
T_A = ≤ 85°C T_A = ≤ 125°C
Test Conditions
V
Min Typ Max Min Max Min Max Unit
V_T+ Positive Threshold Voltage
(Figure 4)
2.0 1.15 1.31 1.60 1.15 1.60 1.15 1.60 V
3.0 1.50 1.82 2.25 1.50 2.25 1.50 2.25
3.6 1.70 2.12 2.60 1.70 2.60 1.70 2.60
V_T− Negative Threshold Voltage
(Figure 4)
2.0 0.30 0.64 0.9 0.30 0.90 0.30 0.90 V
3.0 0.75 1.13 1.45 0.75 1.45 0.75 1.45
3.6 1.00 1.46 1.90 1.00 1.90 1.00 1.90
V_H Hysteresis Voltage
(Figure 4)
2.0 0.30 0.70 1.30 0.30 1.30 0.30 1.30 V
3.0 0.30 0.76 1.50 0.30 1.50 0.30 1.50
3.6 0.35 0.69 1.60 0.35 1.60 0.35 1.60
V_OH Minimum High−Level Output I_OH = − 50 mA
Voltage
I_OH = − 50 mA
V_IN = V_IH or V_IL
I_OH = − 4 mA
V_OL Maximum Low−Level Output I_OL = 50 mA
Voltage
I_OL = 50 mA
V_IN = V_IH or V_IL
I_OL = 4 mA
I_in
Maximum Input Leakage
Current
V_in = 5.5 V or
GND
2.0 1.9 2.0
1.9
1.9
V
3.0 2.9 3.0
2.9
2.9
3.0 2.58
2.48
2.34
2.0
0.0 0.1
0.1
0.1 V
3.0
0.0 0.1
0.1
0.1
3.0
0.36
0.44
0.52
3.6
±0.1
±1.0
±1.0 mA
I_CC Maximum Quiescent Supply V_in = V_CC or GND 3.6
Current
2.0
20
20 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input t_r = t_f = 3.0ns)
Symbol
Parameter
Test Conditions
T_A = 25°C
Min Typ Max
T_A = ≤ 85°C T_A = ≤ 125°C
Min Max Min Max Unit
t_PLH,
t_PHL
Maximum Propagation
Delay,
A or B to Y
t_OSHL, Output to Output Skew
t_OSLH (Note 6)
C_in Maximum Input
Capacitance
V_CC = 2.7V
V_CC = 3.3 ± 0.3V
V_CC = 2.7V
V_CC = 3.3 ± 0.3V
C_L = 15pF
C_L = 50pF
C_L = 15pF
C_L = 50pF
C_L = 50pF
C_L = 50pF
7.0 11.0 1.0 13.0 1.0 15.0 ns
10.0 16.0 1.0 18.7 1.0 20.0
5.8 10.6 1.0 12.5 1.0 14.5
8.3 15.4 1.0 17.5 1.0 19.5
1.5
1.5
1.5 ns
1.5
1.5
1.5
4
10
10
10 pF
Typical @ 25°C, V_CC = 5.0 V
C_PD Power Dissipation Capacitance (Note 6)
11
pF
6. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC / 4 (per gate). C_PD is used to determine the
no−load dynamic power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
NOISE CHARACTERISTICS (Input t_r = t_f = 3.0ns, C_L = 50pF, V_CC = 5.0 V)
Symbol
Characteristic
V_OLP Quiet Output Maximum Dynamic V_OL
V_OLV Quiet Output Minimum Dynamic V_OL
V_IHD Minimum High Level Dynamic Input Voltage
V_ILD Maximum Low Level Dynamic Input Voltage
T_A = 25°C
Typ
Max
Unit
0.3
0.5
V
−0.3
−0.5
V
2.0
V
0.8
V
http://onsemi.com
3