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MC74HCT573A_06 Datasheet, PDF (3/7 Pages) ON Semiconductor – Octal 3−State Noninverting Transparent Latch with LSTTL Compatible Inputs | |||
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MC74HCT573A
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC DC Supply Voltage (Referenced to GND)
â 0.5 to + 7.0
V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin DC Input Voltage (Referenced to GND)
â 0.5 to VCC + 0.5 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout DC Output Voltage (Referenced to GND)
â 0.5 to VCC + 0.5 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
DC Input Current, per Pin
± 20
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iout DC Output Current, per Pin
± 25
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC DC Supply Current, VCC and GND Pins
± 50
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD Power Dissipation in Still Air
Plastic DIPâ
750
mW
SOIC Packageâ
500
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TSSOP Packageâ
450
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (Plastic DIP, TSSOP or SOIC Package)
260
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions.
â Derating â Plastic DIP: â 10 mW/_C from 65_ to 125_C
SOIC Package: â 7 mW/_C from 65_ to 125_C
TSSOP Package: â6.1 mW/°C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC DC Supply Voltage (Referenced to GND)
4.5 5.5 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0
VCC
V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA
Operating Temperature, All Package Types
â 55 + 125 _C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf Input Rise and Fall Time (Figure 1)
0 500 ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIH
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIL
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VOH
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VOL
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ IOZ
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ÎICC
Parameter
Minimum HighâLevel Input
Voltage
Maximum LowâLevel Input
Voltage
Minimum HighâLevel Output
Voltage
Maximum LowâLevel Output
Voltage
Maximum Input Leakage Current
Maximum ThreeâState
Leakage Current
Maximum Quiescent Supply
Current (per Package)
Additional Quiescent Supply
Current
Test Conditions
Vout = 0.1 V or VCC â 0.1 V
|Iout| v 20 μA
Vout = 0.1 V or VCC â 0.1 V
|Iout| v 20 μA
Vin = VIH or VIL
|Iout| v 20 μA
Vin = VIH or VIL
|Iout| v 6.0 mA
Vin = VIH or VIL
|Iout| v 20 μA
Vin = VIH or VIL
|Iout| v 6.0 mA
Vin = VCC or GND
Output in HighâImpedance State
Vin = VIL or VIH
Vout = VCC or GND
Vin = VCC or GND
Iout v 0 μA
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 μA
Guaranteed Limit
VCC
â 55 to
V
25_C v 85_C v 125_C Unit
4.5
2.0
2.0
2.0
V
5.5
2.0
2.0
2.0
4.5
0.8
0.8
0.8
V
5.5
0.8
0.8
0.8
4.5
4.4
4.4
4.4
V
5.5
5.4
5.4
5.4
4.5
3.98
3.84
3.7
4.5
0.1
0.1
0.1
V
5.5
0.1
0.1
0.1
4.5
0.26
0.33
0.4
5.5
± 0.1
± 1.0
± 1.0
μA
5.5
± 0.5
± 5.0
± 10
μA
5.5
4.0
40
160
μA
⥠â 55_C
25_C to 125_C
5.5
2.9
2.4
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book
(DL129/D).
http://onsemi.com
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