MC74HCT374A Datasheet, PDF (3/8 Pages) ON Semiconductor – Octal 3-State Noninverting D Flip-Flop with LSTTL-Compatible Inputs

MC74HCT374A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
– 0.5 to + 7.0
V
– 0.5 to VCC + 0.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 0.5 to VCC + 0.5 V
± 20
mA
DC Output Current, per Pin
± 35
mA
DC Supply Current, VCC and GND Pins
± 75
mA
Power Dissipation in Still Air,
Plastic DIP†
750
mW
SOIC Package†
500
TSSOP Package†
450
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Tstg Storage Temperature}
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TL Lead Temperature, 1 mm from Case for 10 Seconds}
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(Plastic DIP, SOIC, SSOP or TSSOP Package)}
260
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{*Maximum Ratings are those values beyond which damage to the device may occur.}
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v v ^{Vout should be constrained to the}
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC DC Supply Voltage (Referenced to GND)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _TA
Operating Temperature, All Package Types
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tr, tf Input Rise and Fall Time (Figure 1)}
Min Max Unit
4.5 5.5 V
0 VCC V
– 55 + 125 _C
0 500 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VIL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VOH
Parameter
Minimum High–Level Input
Voltage
Maximum Low–Level Input
Voltage
Minimum High–Level Output
Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _VOL
Maximum Low–Level Output
Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Iin
Maximum Input Leakage
Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^IOZ
Maximum Three–State
Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _ICC
Maximum Quiescent Supply
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Current (per Package)}
Test Conditions
v ^{Vout = 0.1 V or VCC – 0.1 V}
|Iout| 20 µA
v ^{Vout = 0.1 V or VCC – 0.1 V}
|Iout| 20 µA
v ^{Vin = VIH or VIL}
|Iout| 20 µA
v ^{Vin = VIH or VIL}
|Iout| 6.0 mA
v ^{Vin = VIH or VIL}
|Iout| 20 µA
v ^{Vin = VIH or VIL}
|Iout| 6.0 mA
Vin = VCC or GND
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND
Vin = VCC or GND
Iout = 0 µA
VCC
V
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
4.5
5.5
5.5
5.5
Guaranteed Limit
– 55 to
25_C
v v 85_C
125_C
Unit
2.0
2.0
2.0
V
2.0
2.0
2.0
0.8
0.8
0.8
V
0.8
0.8
0.8
4.4
4.4
4.4
V
5.4
5.4
5.4
3.98
3.84
3.7
0.1
0.1
0.1
V
0.1
0.1
0.1
0.26
0.33
0.4
± 0.1
± 1.0
± 1.0
µA
± 0.5
± 5.0
± 10
µA
4.0
40
160
µA
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