MC74HCT259A Datasheet, PDF (3/9 Pages) ON Semiconductor – High−Performance Silicon−Gate CMOS

MC74HCT259A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
V_CC
Test Conditions
V
V_IH
Minimum High−Level Input
V_out = 0.1 V or V_CC − 0.1 V
4.5
Voltage
|I_out| v 20 mA
5.5
V_IL
Maximum Low−Level Input
V_out = 0.1 V or V_CC − 0.1 V
4.5
Voltage
|I_out| v 20 mA
5.5
V_OH
Minimum High−Level Output V_in = V_IH or V_IL
4.5
Voltage
|I_out| v 20 mA
5.5
V_in = V_IH or V_IL |I_out| v 5.2 mA 4.5
V_OL
Maximum Low−Level Output V_in = V_IH or V_IL
4.5
Voltage
|I_out| v 20 mA
5.5
V_in = V_IH or V_IL |I_out| v 5.2 mA 4.5
I_in
Maximum Input Leakage
V_in = V_CC or GND
5.5
Current
I_CC
Maximum Quiescent Supply V_in = V_CC or GND
5.5
Current (per Package)
I_out = 0 mA
Guaranteed Limit
− 55 to
25°C
v 85°C v 125°C Unit
2.0
2.0
2.0
V
2.0
2.0
2.0
0.8
0.8
0.8
V
0.8
0.8
0.8
4.4
4.4
4.4
V
5.4
5.4
5.4
3.98
3.84
3.70
0.1
0.1
0.1
V
0.1
0.1
0.1
0.26
0.33
0.40
± 0.1
± 1.0
± 1.0
mA
4
40
160
mA
DI_CC
Additional Quiescent Supply V_in = 2.4V, Any One Input
≥ −55°C
25 to 125°C
Current
V_in = V_CC or GND, Other Inputs
I_out = 0mA
5.5
2.9
2.4
mA
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