MC74HCT04A_06 Datasheet, PDF (3/8 Pages) ON Semiconductor – Hex Inverter

MC74HCT04A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_CC DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_in DC Input Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_out DC Output Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_in
DC Input Current, per Pin
± 20
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_out DC Output Current, per Pin
± 25
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I_CC DC Supply Current, V_CC and GND Pins
± 50
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ P_D Power Dissipation in Still Air
Plastic DIP†
750
mW
SOIC Package†
500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TSSOP Packageâ€} 
450
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Tstg Storage Temperature Range}
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TL Lead Temperature, 1 mm from Case for 10 Seconds}
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Plastic DIP, SOIC or TSSOP Package}
260
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Symbol
Parameter
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC DC Supply Voltage (Referenced to GND)}
4.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND)}
0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA Operating Temperature Range, All Package Types}
– 55
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{tr, tf Input Rise/Fall Time (Figure 1)}
0
Max Unit
5.5
V
V_CC
V
+ 125 _C
500
ns
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
V_CC
Guaranteed Limit
V −55 to 25°C ≤85°C ≤125°C Unit
V_IH
Minimum High−Level Input Voltage V_out = 0.1V
|I_out| ≤ 20mA
4.5
2.0
5.5
2.0
2.0
2.0
V
2.0
2.0
V_IL
Maximum Low−Level Input Voltage V_out = V_CC − 0.1V
|I_out| ≤ 20mA
4.5
0.8
5.5
0.8
0.8
0.8
V
0.8
0.8
V_OH
Minimum High−Level Output
Voltage
V_OL
Maximum Low−Level Output
Voltage
I_in
Maximum Input Leakage Current
I_CC
Maximum Quiescent Supply
Current (per Package)
V_in = V_IL
4.5
|I_out| ≤ 20mA
5.5
V_in = V_IL
|I_out| ≤ 4.0mA 4.5
V_in = V_IH
4.5
|I_out| ≤ 20mA
5.5
V_in = V_IH
|I_out| ≤ 4.0mA 4.5
V_in = V_CC or GND
5.5
V_in = V_CC or GND
5.5
I_out = 0mA
4.4
5.4
3.98
0.1
0.1
0.26
±0.1
1
4.4
4.4
V
5.4
5.4
3.84 3.70
0.1
0.1
V
0.1
0.1
0.33 0.40
±1.0
±1.0
mA
10
40
mA
DI_CC
Additional Quiescent Supply
Current
V_in = 2.4V, Any One Input
≥ −55°C
V_in = V_CC or GND, Other Inputs
I_out = 0mA
5.5
2.9
25 to 125°C
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = I_CC + ΣDI_CC.
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