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MC74HC86A Datasheet, PDF (3/8 Pages) ON Semiconductor – Quad 2-Input Exclusive OR Gate | |||
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MC74HC86A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Guaranteed Limit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Test Conditions
VCC
V
â 55 to
25_C
v v 85_C
125_C Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VOL
Maximum LowâLevel Output
Voltage
v Vin = VIH or VIL
|Iout| 20 µA
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ 6.0
0.1
0.1
0.1
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ v Vin=VIHorVIL |Iout|
v |Iout|
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ v |Iout|
2.4 mA
4.0 mA
5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
Maximum Input Leakage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC
Maximum Quiescent Supply Vin = VCC or GND
Current (per Package)
Iout = 0 µA
6.0
1.0
10
40
µA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ NOTE:Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t, = tf = 6 ns)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPLH,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tPHL
Parameter
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tTLH,
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Cin
Maximum Input Capacitance
VCC
V
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
â
Guaranteed Limit
â 55 to
25_C
v v 85_C
125_C
Unit
100
125
150
ns
80
90
110
20
25
31
17
21
26
75
95
110
ns
30
40
55
15
19
22
13
16
19
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Gate)*
33
pF
* Used to determine the noâload dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
http://onsemi.com
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