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MC74HC393A_06 Datasheet, PDF (3/11 Pages) ON Semiconductor – Dual 4−Stage Binary Ripple Counter High−Performance Silicon−Gate CMOS | |||
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MC74HC393A
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC DC Supply Voltage (Referenced to GND)
â 0.5 to + 7.0
V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin DC Input Voltage (Referenced to GND)
â 0.5 to VCC + 0.5 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vout DC Output Voltage (Referenced to GND)
â 0.5 to VCC + 0.5 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
DC Input Current, per Pin
± 20
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iout DC Output Current, per Pin
± 25
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC DC Supply Current, VCC and GND Pins
± 50
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD Power Dissipation in Still Air,
Plastic DIPâ
750
mW
SOIC Packageâ
500
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TSSOP Packageâ
450
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TL Lead Temperature, 1 mm from Case for 10 Seconds
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Plastic DIP, SOIC or TSSOP Package
260
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
â Derating â Plastic DIP: â 10 mW/_C from 65_ to 125_C
SOIC Package: â 7 mW/_C from 65_ to 125_C
TSSOP Package: â 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighâSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Min
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC DC Supply Voltage (Referenced to GND)
2.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin, Vout DC Input Voltage, Output Voltage (Referenced to
0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA
Operating Temperature, All Package Types
â 55
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf
Input Rise and Fall Time
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (Figure 1)
VCC = 2.0 V
0
VCC = 3.0 V
0
VCC = 4.5 V
0
VCC = 6.0 V
0
Max
6.0
VCC
Unit
V
V
+ 125 _C
1000
ns
600
500
400
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIH Minimum HighâLevel Input
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIL MaximumLowâLevelInput
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VOH MinimumHighâLevelOutput
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage
VCC
Test Conditions
V
Vout = 0.1 V or VCC â 0.1 V
2.0
|Iout| v 20 mA
3.0
4.5
6.0
Vout = 0.1 V or VCC â 0.1 V
2.0
|Iout| v 20 mA
3.0
4.5
6.0
Vin = VIH or VIL
2.0
|Iout| v 20 mA
4.5
6.0
Vin = VIH or VIL |Iout| v 2.4 mA 3.0
|Iout| v 4.0 mA 4.5
|Iout| v 5.2 mA 6.0
Guaranteed Limit
â 55 to
25_C v 85_C v 125_C Unit
1.5
1.5
1.5
V
2.1
2.1
2.1
3.15
3.15
3.15
4.2
4.2
4.2
0.5
0.5
0.5
V
0.9
0.9
0.9
1.35
1.35
1.35
1.80
1.80
1.80
1.9
1.9
1.9
V
4.4
4.4
4.4
5.9
5.9
5.9
2.48
2.34
2.20
3.98
3.84
3.70
5.48
5.34
5.20
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