MC74HC1G04 Datasheet, PDF (3/6 Pages) ON Semiconductor – High speed CMOS inverter fabricated with silicon gate CMOS technology

MC74HC1G04
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
V_CC
Test Conditions (V)
V_IH
Minimum High−Level
2.0
Input Voltage
3.0
4.5
6.0
V_IL
Maximum Low−Level
2.0
Input Voltage
3.0
4.5
6.0
V_OH
Minimum High−Level V_IN = V_IH or V_IL
2.0
Output Voltage
I_OH = −20 mA
3.0
V_IN = V_IH or V_IL
4.5
6.0
V_IN = V_IH or V_IL
I_OH = −2 mA
4.5
I_OH = −2.6 mA
6.0
V_OL
Maximum Low−Level V_IN = V_IH or V_IL
2.0
Output Voltage
I_OL = 20 mA
3.0
V_IN = V_IH or V_IL
4.5
6.0
V_IN = V_IH or V_IL
I_OL = 2 mA
4.5
I_OL = 2.6 mA
6.0
I_IN
Maximum Input
V_IN = 6.0 V or GND 6.0
Leakage Current
I_CC
Maximum Quiescent V_IN = V_CC or GND 6.0
Supply Current
T_A = 25_C
Min Typ Max
1.5
2.1
3.15
4.20
0.5
0.9
1.35
1.80
1.9 2.0
2.9 3.0
4.4 4.5
5.9 6.0
4.18 4.31
5.68 5.80
0.0 0.1
0.0 0.1
0.0 0.1
0.0 0.1
0.17 0.26
0.18 0.26
$0.1
1.0
T_A v 85_C
Min Max
1.5
2.1
3.15
4.20
0.5
0.9
1.35
1.80
1.9
2.9
4.4
5.9
*55_C v T_A v 125_C
Min
Max
Unit
1.5
V
2.1
3.15
4.20
0.5
V
0.9
1.35
1.80
1.9
V
2.9
4.4
5.9
4.13
4.08
5.63
5.58
0.1
0.1
0.1
0.1
0.1
V
0.1
0.1
0.1
0.33
0.33
$1.0
0.40
0.40
$1.0
mA
10
40
mA
AC ELECTRICAL CHARACTERISTICS (Input t_r = t_f = 6.0 ns)
T_A = 25_C
T_A v 85_C *55_C v T_A v 125_C
Symbol
Parameter
Test Conditions
Min Typ Max Min Max
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _tPLH,
Maximum
V_CC = 5.0 V C_L = 15 pF
3.5 15
20
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tPHL
Propagation Delay,
Input A or B to Y
V_CC = 2.0 V C_L = 50 pF
18 100
125
V_CC = 3.0 V
10
27
35
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{VCC = 4.5 V}
7
20
25
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^VCC ^{= 6.0 V}
6
17
21
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tTLH^,
Output Transition
V_CC = 5.0 V C_L = 15 pF
3
10
15
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^tTHL
Time
V_CC = 2.0 V C_L = 50 pF
25 125
155
V_CC = 3.0 V
16
35
45
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ V_CC = 4.5 V
11
25
31
V_CC = 6.0 V
9
21
26
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _CIN
Maximum Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^Capacitance
5
10
10
Max
Unit
25
ns
155
90
35
26
20
ns
200
60
38
32
10
pF
Typical @ 25_C, V_CC = 5.0 V
C_PD
Power Dissipation Capacitance (Note 6)
10
pF
6. C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I_CC(OPR) = C_PD  V_CC  f_in + I_CC. C_PD is used to determine the no−load dynamic
power consumption; P_D = C_PD  V_CC2  f_in + I_CC  V_CC.
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