MC74HC125ADG Datasheet, PDF (3/8 Pages) ON Semiconductor – Quad 3−State Noninverting Buffers

74HC125
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
V_CC DC Supply Voltage (Referenced to GND)
2.0
V_in, V_out DC Input Voltage, Output Voltage
0
(Referenced to GND)
T_A Operating Temperature, All Package Types
– 55
t_r, t_f Input Rise and Fall Time
(Figure 1)
V_CC = 2.0 V
0
V_CC = 4.5 V
0
V_CC = 6.0 V
0
Max
6.0
V_CC
Unit
V
V
+ 125 _C
1000 ns
500
400
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
V_IH Minimum High−Level Input Voltage
Test Conditions
V_out = V_CC – 0.1 V
|I_out| v 20 mA
V_IL Maximum Low−Level Input Voltage V_out = 0.1 V
|I_out| v 20 mA
V_CC – 55 to
(V)
25_C v 85_C v 125_C Unit
2.0
1.5
1.5
1.5
V
3.0
2.1
2.1
2.1
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
2.0
0.5
0.5
0.5
V
3.0
0.9
0.9
0.9
4.5
1.35
1.35
1.35
6.0
1.8
1.8
1.8
V_OH Minimum High−Level Output
Voltage
V_in = V_IH
|I_out| v 20 mA
2.0
1.9
1.9
1.9
V
4.5
4.4
4.4
4.4
6.0
5.9
5.9
5.9
V_OL Maximum Low−Level Output
Voltage
V_in = V_IH
|I_out| v 3.6 mA 3.0
2.48
2.34
2.2
|I_out| v 6.0 mA 4.5
3.98
3.84
3.7
|I_out| v 7.8 mA 6.0
5.48
5.34
5.2
V_in = V_IL
|I_out| v 20 mA
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
6.0
0.1
0.1
0.1
I_in
Maximum Input Leakage Current
I_OZ Maximum Three−State Leakage
Current
V_in = V_IL
|I_out| v 3.6 mA 3.0
|I_out| v 6.0 mA 4.5
|I_out| v 7.8 mA 6.0
V_in = V_CC or GND
6.0
Output in High−Impedance State 6.0
V_in = V_IL or V_IH
V_out = V_CC or GND
0.26
0.26
0.26
±0.1
±0.5
0.33
0.33
0.33
±1.0
±5.0
0.4
0.4
0.4
±1.0
mA
±10
mA
I_CC Maximum Quiescent Supply Current V_in = V_CC or GND
(per Package)
I_out = 0 mA
6.0
4.0
40
40
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
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