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| LM385D-25R2 Datasheet, PDF (3/9 Pages) ON Semiconductor – Micropower Voltage Reference Diodes | |||
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LM285, LM385B
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
LM285-1.2
Characteristic
Symbol
Min
Typ
Max
Reverse Breakdown Voltage Change with Current
DV(BR)R
IRmin v IR v 1.0 mA, TA = +25°C
-
TA = Tlow to Thigh (Note 2)
-
1.0 mA v IR v 20 mA, TA = +25°C
-
TA = Tlow to Thigh (Note 2)
-
-
1.0
-
1.5
-
10
-
20
Reverse Dynamic Impedance
IR = 100 mA, TA = +25°C
Z
-
0.6
-
Average Temperature Coefficient
DV(BR)/DT
20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2)
-
80
-
Wideband Noise (RMS)
IR = 100 mA, 10 Hz v f v 10 kHz
n
-
120
-
Long Term Stability
IR = 100 mA, TA = +25°C ± 0.1°C
S
-
20
-
2. Tlow
Thigh
Tlow
Thigh
= -40°C for LM285-1.2, LM285-2.5
=Ä+85°C for LM285-1.2, LM285-2.5
= 0°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
=Ä+70°C for LM385-1.2, LM385B-1.2, LM385-2.5, LM385B-2.5
LM385-1.2/LM385B-1.2
Min
Typ
Max
-
-
2.0
-
-
2.5
-
-
20
-
-
25
-
0.6
-
-
80
-
-
120
-
-
20
-
Unit
mV
W
ppm/°C
mV
ppm/kHR
http://onsemi.com
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