HBL2020 Datasheet, PDF (3/3 Pages) ON Semiconductor – 1-Channel ESD Protector

HBL2020RP
ELECTRICAL OPERATING CHARACTERISTICS (See Note 1)
Symbol
Parameter
Test Conditions
I_LEAK
V_CL
V_ESD
Leakage Current
Signal Clamp Voltage
Positive polarity on signal node (V_CL+)
Negative polarity on signal node (V_CL−)
ESD Protection − withstand voltage:
Human Body Model (MIL−STD−883, Method 3015)
V = ±4 V, 150°C (Note 2)
V = ±4 V, 25°C (V_L1±)
V = +14 V, 25°C (V_L2+)
T_A = 25°C;
at 10 mA (I_CL+)
at −10 mA (I_CL−)
T_A = 25°C
(Note 2)
1. Operating characteristics are over standard operating conditions unless otherwise specified.
2. This parameter is guaranteed by design and/or characterization.
MECHANICAL DETAILS
Min
+16
−9.0
±8
Typ
+19
−7.0
Max
4.0
0.3 (I_L1±)
0.5 (I_L2+)
+22
−5.0
Unit
mA
mA
mA
V
kV
MECHANICAL SPECIFICATIONS
Parameter
Condition
Unit
Composition
Silicon wafer,
p+ doped
Die shape
Square
Length (sawn)
200
mm
Width (sawn)
200
mm
Thickness
4
mils
Top pad length
125
mm
Top pad width
125
mm
Top pad composition
Al (Aluminum)
Back metal (underside)
LCBM
Dimensions Diagram
Sawn Die Size:
200 mm x 200 mm
Top Pad Opening:
125 mm x 125 mm
Figure 3. Die Dimensions
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HBL2020/D