EMI4193 Datasheet, PDF (3/9 Pages) ON Semiconductor – Common Mode Filter

EMI4193
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
I_LEAK
V_F
C_IN
R_CH
Channel Leakage Current
T_A = 25°C, V_IN = 5 V, GND = 0 V
Channel Negative Voltage
T_A = 25°C, I_F = 10 mA
Channel Input Capacitance to Ground
(Pins 1,2,4,5,7,8 to Pins 3,6,11,14)
T_A = 25°C, At 1 MHz, GND = 0 V,
V_IN = 1.65 V
Channel Resistance
(Pins 1−16, 2−15, 4−13, 5−12, 7−10 & 8−9)
1.0
mA
0.1
1.5
V
0.8
1.3
pF
3.5
5.0
W
f_3dB
F_atten
Z_C
V_ESD
Differential Mode Cut−off Frequency
Common Mode Stop Band Attenuation
Common Mode Impedance
In−system ESD Withstand Voltage
a) Contact discharge per IEC 61000−4−2
standard, Level 4 (External Pins)
b) Contact discharge per IEC 61000−4−2
standard, Level 1 (Internal Pins)
50 W Source and Load Termination
@ 900 MHz
@ 100 MHz
(Notes 1 and 2)
4.0
16
32
±15
±2
GHz
dB
W
kV
V_CL TLP Clamping Voltage
(See Figure 9)
R_DYN
Dynamic Resistance
Positive Transients
Negative Transients
Forward I_PP = 8 A
Forward I_PP = 16 A
Forward I_PP = −8 A
Forward I_PP = −16 A
T_A = 25°C, I_PP = 1 A, t_P = 8/20 ms
Any I/O pin to Ground;
Notes 1 and 3
12
V
18
V
−6
V
−12
V
1.36
0.6
V_RWM Reverse Working Voltage
(Note 3)
5.0
V
V_BR Breakdown Voltage
I_T = 1 mA; (Note 4)
5.6
9.0
V
1. Standard IEC61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330, GND grounded.
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V_RWM), which should be equal to or greater than the DC
or continuous peak operating voltage level.
4. V_BR is measured at pulse test current I_T.
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