DTA113EM3 Datasheet, PDF (3/10 Pages) ON Semiconductor – PNP Transistors with Monolithic Bias Resistor Network

MUN2130, MMUN2130L, MUN5130, DTA113EE, DTA113EM3, NSBA113EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC−59) (MUN2130)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−23) (MMUN2130L)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5130)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Lead
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC−75) (DTA113EE)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT−723) (DTA113EM3)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm², 1 oz. copper traces, still air.
4. FR−4 @ 500 mm², 1 oz. copper traces, still air.
Symbol
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P_D
R_qJA
R_qJL
T_J, T_stg
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P_D
R_qJA
R_qJL
T_J, T_stg
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P_D
R_qJA
R_qJL
T_J, T_stg
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P_D
R_qJA
T_J, T_stg
(Note 1)
(Note 2)
(Note 1)
(Note 2)
(Note 1)
(Note 2)
P_D
R_qJA
T_J, T_stg
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3
Max
Unit
230
338
1.8
2.7
540
370
264
287
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
246
400
2.0
3.2
508
311
174
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
202
310
1.6
2.5
618
403
280
332
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
−55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
−55 to +150
mW
mW/°C
°C/W
°C