CPH3453 Datasheet, PDF (3/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH3453
RDS(on) -- VGS
20
Ta=25°C
18
16
14
150mA
12
10
8 _ID=75mA
6
4
2
0
0
2
4
6
8
10
Gate-to-Source Voltage, VGS -- V IT14471
| yfs | -- ID
5
3
VDS=10V
2
1.0
7
5
3
Ta= ^--25°C ₇₅^°C
2
0.1
25^°C
7
5
3
2
0.01
7
0.001
100
7
5
23
5 7 _0.01 2 3 5 7 _0.1
Drain Current, ID -- A
SW Time -- ID
2 3 57
IT14473
VDD=100V
VGS=4.5V
3
tf
2
td(off)
10
7
td(on)
5
tr
3
0.1
4.5
VDS=125V
4.0 ID=0.3A
3.5
2
3
5
Drain Current, ID -- A
VGS -- Qg
7
10
IT14475
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Total Gate Charge, Qg -- nC
IT14477
RDS(on) -- Ta
20
18
16
14
12
10
8
V GS=V4G.5SV=,2I.D5=V1, ^{5I 0Dm=7A5mA}
6
4
2
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14472
1.0
IS -- VSD
7
VGS=0V
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
3
2
100
7
5
0.2
0.4
0.6
0.8
1.0
1.2
Diode Forward Voltage, VSD -- V IT14474
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
10
Coss
7
5
Crss
3
2
0 5 10 15 20 25 30 35 40
Drain-to-Source Voltage, VDS -- V
ASO
3
2 _{IDP=1.2A (PW≤10μs)}
1.0
7
5
3
2
0.1
7
5
3
ID=0.3A
Operation in this area
10m1sm1s001^μ0sμs
DC
100ms
operation
2 is limited by RDS(on).
45 50
IT14476
0.01
7
5
3 Ta=25°C
2 Single pulse
0.001 ^{When mounted on ceramic substrate (900mm2×0.8mm)}
1.0
2 3 5 7 ₁₀
2 3 5 7 ₁₀₀
23 5
Drain-to-Source Voltage, VDS -- V IT15493
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