CM6310 Datasheet, PDF (3/4 Pages) ON Semiconductor – EMI Filter

CM6310
RF CHARACTERISTICS
T_A = 255C, DC bias = 0 V, 50 W Environment Using Evaluation PCB
Figure 1. Typical Filter Frequency Response
MECHANICAL SPECIFICATION
Table 4. VERTICAL STRUCTURE DIMENSIONS (nominal)
Ref.
Parameter
Material
Dimension
a Die Thickness
Silicon
406 mm
b Bump Standoff
240 mm
UBM−(Ti/Cu)
Plated Cu
5.0 mm
d
Sputtered Cu
0.4 mm
Sputtered Ti
0.1 mm
e
UBM Wetting Area
Diameter
280 mm
f
Solder Bump Diameter
after Bump Reflow
320 mm
c Metal Pad
AlSiCu
1.5 mm
g Metal Pad Diameter
324 mm
D2
0.406 mm
D1 Finished Thickness
0.650 mm
Vertical Structure Specification*
Figure 2. Sectional View
* Daisy Chain CM6010
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