CM1443-08CP_11 Datasheet, PDF (3/10 Pages) ON Semiconductor – 8-Channel EMI Filter Array with ESD Protection

CM1443−08CP
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min Typ Max Units
R
Resistance
80
100 120
W
C_T
C_S
TCR
Total Capacitance
Single Capacitor
Temperature Coefficient of Resistance
At 2.5 V DC
At 2.5 V DC
14
17
21
pF
8.5
pF
1200
ppm/°C
TCC
Temperature Coefficient of Capacitance
At 2.5 V DC
−300
ppm/°C
V_DIODE
I_LEAK
V_SIG
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
I_DIODE = 10 mA
V_DIODE = 3.3 V
I_LOAD = 10 mA
5.5
V
0.1
1.0
mA
V
5.6
6.8
9.0
−1.5 –0.8 −0.4
V_ESD
In−system ESD Withstand Voltage
(Notes 2 and 4)
kV
a) Human Body Model, MIL−STD−883,
±30
Method 3015
b) Contact Discharge per IEC 61000−4−2
±15
Level 4
V_CL
Clamping Voltage during ESD Discharge
MIL−STD−883 (Method 3015), 8 kV
Positive Transients
Negative Transients
(Notes 2, 3 and 4)
V
+10
–5
f_C
Cut−off Frequency
Z_SOURCE = 50 W, Z_LOAD = 50 W
R = 100 W, C_S = 8.5 pF
MHz
220
1. T_A = 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
4. Unused pins are left open.
APPLICATION INFORMATION
Refer to Application Note “The Chip Scale Package”, for a detailed description of Chip Scale Packages offered by
ON Semiconductor.
PERFORMANCE INFORMATION
Figure 1. Resistance vs. Temperature (normalized to resistance at 255C)
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