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CM1400 Datasheet, PDF (3/10 Pages) ON Semiconductor – 6 Channel EMI Filter Array with ESD Protection | |||
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CM1400â03
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min Typ Max Units
R
Resistance
80
100 120
W
C
Capacitance
At 2.5 V DC
24
30
36
pF
TCR
Temperature Coefficient of Resistance
1200
ppm/°C
TCC
Temperature Coefficient of Capacitance
At 2.5 V DC
â300
ppm/°C
VDIODE
ILEAK
VSIG
Diode Voltage (reverse bias)
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
IDIODE = 10 mA
VDIODE = 3.3 V
ILOAD = 10 mA
6.0
V
100
nA
V
5.6
6.8
9.0
â1.5 â0.8 â0.4
VESD
Inâsystem ESD Withstand Voltage
a) Human Body Model, MILâSTDâ883,
Method 3015
b) Contact Discharge per IEC 61000â4â2
Level 4
(Note 2)
kV
±30
±15
VCL
Clamping Voltage during ESD Discharge
MILâSTDâ883 (Method 3015), 8 kV
Positive Transients
Negative Transients
(Notes 2 and 3)
V
+10
â5
fC
Cutâoff Frequency
ZSOURCE = 50 W, ZLOAD = 50 W
R = 100 W, C = 30 pF
MHz
58
1. TA = 25°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
http://onsemi.com
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