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| CM1263-02SE_11 Datasheet, PDF (3/4 Pages) ON Semiconductor – Low Capacitance ESD Protection for High-Speed Serial Interfaces | |||
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CM1263â02SE
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
VP
Operating Supply Voltage (VP â VN)
IP
Operating Supply Current
(VP â VN) = 3.3 V
VF
Diode Forward Voltage
Top Diode
Bottom Diode
IF = 8 mA; TA = 25°C
ILEAK
CIN
ÎCIN
VESD
Channel Leakage Current
Channel Input Capacitance
Channel Input Capacitance Matching
ESD Protection
Peak Discharge Voltage at any
channel input, in system:
a) Contact Discharge per
IEC 61000â4â2 standard
b) Air Discharge per
IEC 61000â4â2 standard
TA = 25°C; VP = 5 V, VN = 0 V,
VTEST = 0 to 5 V
At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V
At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V
TA = 25°C; (Notes 2 and 3)
TA = 25°C; (Note 3)
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA = 25°C, IPP = 1 A, tP = 8/20 mS
(Note 3)
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
IPP = 1 A, tP = 8/20 mS
Any I/O pin to Ground;
(Note 3)
1. All parameters specified at TA = â40°C to +85°C unless otherwise noted.
2. Standard IEC 61000â4â2 with CDischarge = 150pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.
3. These measurements performed with no external capacitor on VP (VP floating).
Min
0.60
0.60
±8
±15
Typ
3.3
0.80
0.80
0.1
0.85
0.02
+9.96
â1.6
0.96
0.5
Max
5.5
8.0
0.95
0.95
1.0
1.2
Units
V
mA
V
mA
pF
pF
kV
V
W
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