CM1263-02SE Datasheet, PDF (3/6 Pages) ON Semiconductor – Low Capacitance ESD Protection for High-Speed Serial Interfaces

CM1263-02SE
ELECTRICAL OPERATING CHARACTERISTICS ^{(SEE NOTE 1)}
SYMBOL PARAMETER
CONDITIONS
V_P
Operating Supply Voltage (V_P-V_N)
I_P
Operating Supply Current
(V_P-V_N)=3.3V
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
I_F=8mA; T_A=25°C
I_LEAK
Channel Leakage Current
T_A=25°C; V_P=5V, V_N=0V,
V_TEST=0 to 5V
C_IN
Channel Input Capacitance
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V
MIN TYP MAX UNITS
3.3 5.5
V
8.0 µA
0.60 0.80 0.95 V
0.60 0.80 0.95 V
0.1 1.0 µA
0.85 1.2 pF
∆C_IN
Channel Input Capacitance
Matching
At 1 MHz, V_P=3.3V, V_N=0V, V_IN=1.65V
0.02
pF
V_ESD
ESD Protection
Peak Discharge Voltage at any
channel input, in system:
a) Contact discharge per
IEC 61000-4-2 standard
T_A=25°C; Notes 2 and 3
and
b) Air discharge per
IEC 61000-4-2 standard
T_A=25°C; Note 3
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T_A=25°C, I_PP = 1A, t_P = 8/20µS;
Note 3
±8
kV
±15
kV
+9.96
V
–1.6
V
R_DYN Dynamic Resistance
Positive Transients
Negative Transients
I_PP = 1A, t_P = 8/20µS
Any I/O pin to Ground;
Note 3
0.96
Ω
0.5
Ω
Note 1: All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
Note 2: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_P = 3.3V, V_N grounded.
Note 3: These measurements performed with no external capacitor on V_P (V_P floating).
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