CM1249-04S9 Datasheet, PDF (3/7 Pages) ON Semiconductor – Low Capacitance Transient Voltage Suppressors/ESD Protectors

CM1248-04S9
PARAMETER
Operating Temperature
STANDARD OPERATING CONDITIONS
RATING
–40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS ^{(NOTE 1)}
SYMBOL PARAMETER
C Channel Input Capacitance
IN
ΔC ^{Differential Channel I/O to GND}
IN _Capacitance
CONDITIONS
T = 25°C, 0VDC, 1MHz
A
T = 25°C, 2.5VDC, 1MHz
A
I_LEAK Leakage Current
V_SIG Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
V_IN = 3.5VDC, T_A = 25°C
I = 5mA, T_A = 25°C
I = –5mA, T_A = 25°C
V
ESD Withstand Voltage
ESD
Contact Discharge per IEC 61000- Notes 3 and 4; T = 25°C
A
4-2 standard
Human Body Model, MIL-STD-883, Notes 2 and 4; T = 25°C
A
Method 3015
R_D Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
T_A = 25°C; Note 2
MIN TYP MAX UNITS
5
7
pF
0.14
pF
0.75 _μA
6.1
8.5
V
–1.5
–0.4
V
±8
kV
±15
kV
0.7
Ω
2.1
Ω
Note 1: All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
Note 2: Human Body Model per MIL-STD-883, Method 3015, C_Discharge = 100pF, R_Discharge = 1.5KΩ, V_N grounded.
Note 3: Standard IEC 61000-4-2 with C_Discharge = 150pF, R_Discharge = 330Ω, V_N grounded.
Note 4: These measurements performed with no external capacitor on CH.
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