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| CM1248-08DE Datasheet, PDF (3/6 Pages) ON Semiconductor – Low Capacitance Transient Voltage Suppressors / ESD Protectors | |||
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CM1248-04DE
ELECTRICAL OPERATING CHARACTERISTICS (NOTE 1)
SYMBOL PARAMETER
CIN Channel Input Capacitance
CONDITIONS
TA = 25°C, 0VDC, 1MHz
0VDC, 1MHz
ÎCIN Differential Channel I/O to GND
Capacitance
TA = 25°C, 2.5VDC, 1MHz
VRSO Reverse Stand-off Voltage
ILEAK Leakage Current
VSIG Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
IR=10µA, TA = 25°C
IR=1mA, TA = 25°C
VIN=5.0VDC, TA = 25°C
VIN=5.0VDC
I = 10mA, TA = 25°C
I = -10mA, TA = 25°C
VESD ESD Withstand Voltage
Contact Discharge per IEC 61000- Notes 2 and 3; TA = 25°C
4-2 standard
RD Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
TA=25°C, IPP = 1A, tP = 8/20ms
MIN TYP MAX UNITS
10
pF
7
15
pF
0.19
pF
5.5
V
6.1
V
0.25 µA
0.75 µA
6.8
V
-0.89
V
+15
kV
0.57
Ω
1.36
Ω
Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Note 2: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VN grounded.
Note 3: These measurements performed with no external capacitor on CHX.
Rev. 3 | Page 3 of 6| www.onsemi.com
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