CM1248-04S9 Datasheet, PDF(3/7 Page) ON Semiconductor – Low Capacitance Transient Voltage Suppressors / ESD Protectors

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CM1248-04S9 Datasheet, PDF (3/7 Pages) ON Semiconductor – Low Capacitance Transient Voltage Suppressors / ESD Protectors

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CM1248-04S9

ELECTRICAL OPERATING CHARACTERISTICS (NOTE 1)

SYMBOL PARAMETER

CIN Channel Input Capacitance

âCIN

Differential Channel I/O to GND

Capacitance

CONDITIONS

TA = 25Â°C, 0VDC, 1MHz

TA = 25Â°C, 2.5VDC, 1MHz

VRSO Reverse Stand-off Voltage

ILEAK Leakage Current

VSIG Small Signal Clamp Voltage

Positive Clamp

Negative Clamp

IR=10ÂµA, TA = 25Â°C

IR=1mA, TA = 25Â°C

VIN=5.0VDC, TA = 25Â°C

I = 10mA, TA = 25Â°C

I = -10mA, TA = 25Â°C

VESD ESD Withstand Voltage

Contact Discharge per IEC 61000- Notes 3 and 4; TA = 25Â°C

4-2 standard

Human Body Model, MIL-STD-883, Notes 2 and 4; TA = 25Â°C

Method 3015

RD Diode Dynamic Resistance

Forward Conduction

Reverse Conduction

TA = 25Â°C; Note 2

MIN TYP MAX UNITS

0.19

5.5

6.1

0.75 ÂµA

6.8

-0.89

+15

+30

0.57

â¦

1.36

â¦

Note 1: All parameters specified at TA = -40Â°C to +85Â°C unless otherwise noted.

Note 2: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5Kâ¦, VN grounded.

Note 3: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330â¦, VN grounded.

Note 4: These measurements performed with no external capacitor on CHX.

Rev. 2 | Page 3 of 7| www.onsemi.com

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