CM1224_12 Datasheet, PDF (3/11 Pages) ON Semiconductor – 2 and 4-Channel Low Capacitance ESD Protection Arrays

CM1224
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Package Power Rating
SOT23−3, SOT143−4, SOT23−5 and SOT23−6 Packages
MSOP−10 Package
Rating
–40 to +85
225
400
Units
°C
mW
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note1)
Symbol
Parameter
Conditions
Min
V_P
Operating Supply Voltage (V_P−V_N)
I_P
Operating Supply Current
(V_P−V_N) = 3.3 V
V_F
Diode Forward Voltage
I_F = 8 mA; T_A = 25°C
Top Diode
0.6
Bottom Diode
0.6
I_LEAK
C_IN
DC_IN
V_ESD
Channel Leakage Current
T_A = 25°C; V_P = 5 V, V_N = 0 V
Channel Input Capacitance
At 1 MHz, V_P = 3.3 V, V_N = 0 V, V_IN = 1.65 V 0.6
Channel Input Capacitance Matching At 1 MHz, V_P = 3.3 V, V_N = 0 V, V_IN = 1.65 V
ESD Protection − Peak Discharge
Voltage at any channel input, in system
Contact discharge per
IEC 61000−4−2 standard
T_A = 25°C (Notes 2 and 3)
±8
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
T_A = 25°C, I_PP = 1A,
t_P = 8/20 mS; (Note 3)
R_DYN
Dynamic Resistance
Positive Transients
Negative Transients
I_PP = 1A, t_P = 8/20 mS
Any I/O pin to Ground;
(Note 3)
1. All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
2. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W, V_P = 3.3 V, V_N grounded.
3. These measurements performed with no external capacitor on V_P (V_P floating).
Typ
3.3
0.8
0.8
±0.1
0.7
0.02
+10
–1.8
1.08
0.66
Max
5.5
8.0
0.95
0.95
±1.0
0.8
Units
V
mA
V
mA
pF
pF
kV
V
W
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