CM1216_11 Datasheet, PDF (3/7 Pages) ON Semiconductor – 6 and 8-Channel Low Capacitance ESD Arrays

CM1216
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol Parameter
Conditions
V_P
Operating Supply Voltage
(V_P−V_N)
I_P
Operating Supply Current
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
(V_P−V_N) = 3.3 V
I_F = 20 mA; T_A = 25°C
I_LEAK
C_IN
Channel Leakage Current
Channel Input Capacitance
T_A = 25°C; V_P = 5 V, V_N = 0 V
At 1 MHz, V_P = 3.3 V, V_N = 0 V, V_IN = 1.65 V
(Note 2)
DC_IN
C_MUTUAL
V_ESD
Channel Input Capacitance Matching
Mutual Capacitance
ESD Protection
Peak Discharge Voltage at any
channel input, in system,
contact discharge per
IEC 61000−4−2 standard
(V_P−V_N) = 3.3 V
T_A = 25°C
(Notes 2 and 3)
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
I_PP = 1 A, t_P = 8/20 mS; T_A = 25°C
R_DYN
Dynamic Resistance
Positive transients
Negative transients
I_PP = 1 A, t_P = 8/20 mS; T_A = 25°C
1. All parameters specified at T_A = −40°C to +85°C unless otherwise noted.
2. Standard IEC 61000−4−2 with C_Discharge = 150 pF, R_Discharge = 330 W, V_P = 3.3 V, V_N grounded.
3. From I/O pins to V_P or V_N only. V_P bypassed to V_N with low ESR 0.2 mF ceramic capacitor.
Min Typ Max Units
3.3 5.5
V
8
mA
V
0.6 0.8 0.95
0.6 0.8 0.95
±0.1 ±1.0 mA
1.6 2.0 pF
0.04
pF
0.13
pF
kV
±15
V
+9.0
−1.5
W
0.6
0.4
PERFORMANCE CHARACTERISTICS
Figure 1. Typical Variation of C_IN vs. V_IN
(f = 1 MHz, V_P= 3.3 V, V_N = 0 V, 0.1 mF Chip Capacitor between V_P and V_N, T_A = 255C)
http://onsemi.com
3