CM1205 Datasheet, PDF (3/8 Pages) ON Semiconductor – 8-Channel ESD Protection Array in Chip Scale Package

CM1205
ELECTRICAL OPERATING CHARACTERISTICS¹
SYMBOL PARAMETER
V_REV
Reverse Standoff Voltage
I_LEAK
Leakage Current
V_SIG
Signal Clamp Voltage
Positive Clamp
Negative Clamp
CONDITIONS
I_DIODE=10µA
V_IN=3.3V DC
I_LOAD = 10mA
V_ESD In-system ESD Withstand Voltage
Note 2
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
V_CL
Clamping Voltage during ESD Discharge Note 2
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
C
Channel Capacitance
At 2.5V DC, f = 1MHz,
MIN TYP
6.0
MAX
100
5.6 6.8
8.0
-1.2 -0.8
-0.4
+30
+25
+12
-8
39
47
UNITS
V
nA
V
V
kV
kV
V
V
pF
Note 1: T_A=25°C unless otherwise specified. GND in this document refers to the lower supply voltage.
Note 2: ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to
ground.
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