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CAT8900B120TBGT3 Datasheet, PDF (3/7 Pages) ON Semiconductor – Precision Analog Voltage References
CAT8900
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 2)
Rating
Value
Unit
VIN
Storage Temperature Range
6.5
V
−55 to +125
_C
Junction Temperature Range
+150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Maximum terminal current is bounded by the maximum current handling of the switches, maximum power dissipation of the package.
Table 3. RECOMMENDED OPERATING CONDITIONS
Rating
Temperature Range
Value
Unit
−40 to +85
_C
Table 4. ELECTRICAL CHARACTERISTICS
VIN = 3.0 V, IOUT = 0 mA, COUT = 0.001 mF, −40_C to +85_C unless specified otherwise.
Parameter
Test Conditions
Symbol
Output Voltage
Initial Accuracy
Output Voltage Noise (Note 3)
CAT8900x102
CAT8900x120
CAT8900x125
CAT8900x180
CAT8900x204
CAT8900x250
CAT8900x260
CAT8900x300 (VIN = 5.0 V)
CAT8900x330 (VIN = 5.0 V)
Grade B (TA = 25°C)
Grade C (TA = 25°C)
Grade D (TA = 25°C)
f = 0.1 Hz to 10 Hz
VOUT
Output Voltage Temperature Drift
Thermal Hysteresis (Note 3)
Line Regulation
Dropout Voltage
Load Regulation Sourcing
Sinking
−40°C to 85°C
ΔTA = 125°C
2.7 V < VIN < 5.5 V
VIN = 3.0 V, CAT8900x250
0 mA < ILOAD < 10 mA; VIN = 3 V
−10 mA < ILOAD < 0 mA;
VIN = 3 V
DVOUT ÷ DT
DVOUT ÷ DTA
DVOUT ÷ DVIN
VDO
DVOUT ÷ DILOAD
Long Term Stability (Note 3)
Output Current
Short Circuit Current (Note 3)
Sourcing
Sinking
Turn−on Settling Time
POWER SUPPLY
TA = 25°C; first 1000 hours
TA = 25°C
VOUT pin shorted to GND
VOUT pin shorted to VIN
0.1% @ VIN = 3 V; CL = 0 pF
DVOUT ÷ Dt
ILOAD
ISC
Input Voltage
IL = 0 mA
VIN
Supply current
IIN
3. Guaranteed by design.
Min
−1.0
−2.5
−5.0
−10
2.7
Typ
1.024
1.200
1.250
1.800
2.048
2.500
2.600
3.000
3.300
50
20
100
30
1.0
100
150
50
40
20
2
450
Max
Unit
V
+1.0
mV
+2.5
+5.0
mVp−p
50
ppm/°C
ppm
100
mV/V
2.5
mV
250
mV/mA
350
mV/mA
ppm
+10
mA
mA
60
40
ms
5.5
V
800
nA
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