English
Language : 

CAT5132ZI-10 Datasheet, PDF (3/12 Pages) ON Semiconductor – 16 Volt Digital Potentiometer (POT) with 128 Taps and I2C Interface
CAT5132
Table 4. POTENTIOMETER CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Limits
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
RPOT
RPOT
RPOT
RTOL
Potentiometer Resistance (100 kW)
Potentiometer Resistance (50 kW)
Potentiometer Resistance (10 kW)
Potentiometer Resistance Tolerance
Power Rating
25C
100
kW
50
kW
10
kW
20
%
50
mW
IW
Wiper Current
RW Wiper Resistance
VTERM
RES
Voltage on RW, RH or RL
Resolution
IW = 1 mA @ V+ = 12 V
IW = 1 mA @ V+ = 8 V
GND = 0 V; V+ = 8 V to 16 V
3
mA
70
150
W
110
200
W
GND
V+
V
0.78
%
ALIN Absolute Linearity (Note 6)
VW(n)(actual) − VW(n)(expected) (Notes 9, 10)
1
LSB
(Note 8)
RLIN Relative Linearity (Note 7)
VW(n+1) − [VW(n) + LSB] (Notes 9, 10)
0.5
LSB
(Note 8)
TCRPOT Temperature Coefficient of RPOT
(Note 5)
300
ppm/C
TCRatio Ratiometric Temperature Coefficient
(Note 5)
30 ppm/C
CH/CL/CW Potentiometer Capacitances
(Note 5)
10/10/25
pF
fc
Frequency Response
RPOT = 50 kW
0.4
MHz
5. This parameter is tested initially and after a design or process change that affects the parameter.
6. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
potentiometer.
7. Relative linearity is utilized to determine the actual change in voltage between two successive tap positions when used as a potentiometer.
8. LSB = (RHM − RLM)/127; where RHM and RLM are the highest and lowest measured values on the wiper terminal.
9. n = 1, 2, ..., 127
10. V+ @ RH; 0 V @ RL; VW measured @ RW with no load.
Table 5. D.C. ELECTRICAL CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Max
ICC1 Power Supply Current
FSCL = 400 kHz, SDA Open,
1
(Volatile Write/Read)
VCC = 5.5 V, Input = GND
ICC2 Power Supply Current
FSCL = 400 kHz, SDA Open,
3.0
(Nonvolatile WRITE)
VCC = 5.5 V, Input = GND
ISB(VCC)
ISB(V+)
ILI
ILO
VIL
VIH
VOL1
Standby Current (VCC = 5 V)
V+ Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage (VCC = 3.0)
VIN = GND or VCC, SDA = VCC
VCC = 5 V, V+ = 16 V
VIN = GND to VCC
VOUT = GND to VCC
IOL = 3 mA
−1
VCC x 0.7
5
10
10
10
VCC x 0.3
VCC + 1.0
0.4
Units
mA
mA
mA
mA
mA
mA
V
V
V
Table 6. CAPACITANCE (TA = 25C, f = 1.0 MHz, VCC = 5.0 V)
Symbol
Parameter
Test Conditions
CI/O Input/Output Capacitance (SDA)
CIN Input Capacitance (A0, A1, SCL)
VI/O = 0 V (Note 11)
VIN = 0 V (Note 11)
Min
Max
Units
8
pF
6
pF
http://onsemi.com
3