CAT5114 Datasheet, PDF (3/15 Pages) Catalyst Semiconductor – 32-Tap Digitally Programmable Potentiometer (DPP)

CAT5114
OPERATION MODES
I¯N¯C¯
C¯¯S
High to Low
Low
High to Low
Low
High
Low to High
Low
Low to High
X
High
U/D¯
High
Low
X
X
X
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
Parameters
Supply Voltage
V_CC to GND
Inputs
C¯¯S to GND
I¯N¯C¯ to GND
U/D¯ to GND
H to GND
L to GND
W to GND
Ratings
-0.5 to +7
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
Operation
C_H
Wiper toward H
Wiper toward L
Store Wiper Position
No Store, Return to Standby
Standby
C_L
Units
V
V
V
V
V
V
V
Parameters
Operating Ambient Temperature
Industrial (‘I’ suffix)
Junction Temperature
Storage Temperature
Lead Soldering (10 s max)
R_H
R_WI
R_W
C_W
Potentiometer
R_L
Equivalent Circuit
Ratings Units
-40 to +85 ºC
+150
ºC
-65 to 150
ºC
+300
ºC
RELIABILITY CHARACTERISTICS
Symbol
V_ZAP ⁽²⁾
I_LTH ⁽²⁾⁽³⁾
T_DR
N_END
Parameter
ESD Susceptibility
Latch-Up
Data Retention
Endurance
Test Method
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
Min
Typ
2000
100
100
1,000,000
Max Units
V
mA
Years
Stores
DC ELECTRICAL CHARACTERISTICS
V_CC = +2.5 V to +6 V unless otherwise specified
Power Supply
Symbol Parameter
Conditions
Min Typ Max Units
V_CC Operating Voltage Range
2.5
–
6.0
V
I_CC1
Supply Current (Increment) ^{VCC = 6 V, f = 1 MHz, IW = 0}
V_CC = 6 V, f = 250 kHz, I_W = 0
–
–
–
100
µA
–
50
µA
I_CC2 Supply Current (Write)
Programming, V_CC = 6 V
V_CC = 3 V
–
–
1000
µA
–
–
500
µA
I_SB1(3)
Supply Current (Standby)
C¯¯S = V_CC - 0.3 V
U/D¯, I¯N¯C¯ = V_CC - 0.3 V or GND
–
–
1
µA
Notes
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100 mA on address and data pins from -1 V to V_CC + 1 V.
(4) I_W = source or sink.
(5) These parameters are periodically sampled and are not 100% tested.
© 2009 SCILLC. All rights reserved.
3
Characteristics subject to change without notice
Doc. No. MD-2007 Rev. S