BU323Z Datasheet, PDF (3/6 Pages) Motorola, Inc – AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS

IC
INOM = 6.5 A
Output transistor turns on: IC = 40 mA
High Voltage Circuit turns on: IC = 20 mA
Avalanche diode turns on: IC = 100 µA
Icer Leakage Current
250 V
300 V
340 V
VCE
VCLAMP NOMINAL
= 400 V
Figure 1. IC = f(VCE) Curve Shape
BU323Z
By design, the BU323Z has a built–in avalanche diode and
a special high voltage driving circuit. During an auto–protect
cycle, the transistor is turned on again as soon as a voltage,
determined by the zener threshold and the network, is
reached. This prevents the transistor from going into a
Reverse Bias Operating limit condition. Therefore, the device
will have an extended safe operating area and will always
appear to be in “FBSOA.” Because of the built–in zener and
associated network, the IC = f(VCE) curve exhibits an
unfamiliar shape compared to standard products as shown in
Figure 1.
MERCURY CONTACTS
WETTED RELAY
L INDUCTANCE
(8 mH)
VCE
MONITOR
(VGATE)
IB CURRENT
SOURCE
RBE = 100 Ω
VBEoff
IB2 SOURCE
IC
MONITOR
IC CURRENT
SOURCE
0.1 Ω
NON
INDUCTIVE
Figure 2. Basic Energy Test Circuit
The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. VCE and IC are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy tested,
per the test circuit and criteria described in Figures 2 and 4,
to the minimum guaranteed repetitive energy, as specified in
the device parameter section. The device can sustain this
energy on a repetitive basis without degrading any of the
specified electrical characteristics of the devices. The units
under test are kept functional during the complete test se-
quence for the test conditions described:
IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,
RBE = 100 Ω, Vgate = 280 V, L = 8.0 mH
10
1 ^{TC = 25°C}
0.1
1 ms
10 ms
250 ms
300 µs
0.01
0.001
10
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO
100
340 V
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3