BDV65B_06 Datasheet, PDF (3/4 Pages) ON Semiconductor – Complementary Silicon Plastic Power Darlingtons

BDV65B BDV64B
10
10
1
V_BE(sat) @ I_C/I_B = 250
1
V_BE(sat) @ I_C/I_B = 250
0.1
0.1
0.1
1
10
0.1
1
10
I_C, COLLECTOR CURRENT (A)
I_C, COLLECTOR CURRENT (A)
Figure 4. “On” Voltages
Figure 5. “On” Voltages
100
50
100 μs
20
5.0 ms ^{1.0 ms}
10
dc
5
SECONDARY BREAKDOWN
LIMITED @ T_J v 150°C
1
THERMAL LIMIT @ T_C = 25°C
BONDING WIRE LIMIT
BDV65B, BDV64B
1
10
30 50
100
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 6. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on T_J(pk) = 150_C, T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
v 150_C. T_J(pk) may be calculated from the data in
Figure 7. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
1.0
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.03
0.01
0.01
0.01
(SINGLE PULSE)
0.05 0.1
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
Z_θJC(t) = r(t) R_θJC
R_θJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) Z_θJC(t)
0.5 1.0
5
10
t, TIME (ms)
Figure 7. Thermal Response
50 100
500 1000
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