BCP69T1G_11 Datasheet, PDF (3/4 Pages) ON Semiconductor – PNP Silicon Epitaxial Transistor

BCP69T1G, NSVBCP69T1G
TYPICAL ELECTRICAL CHARACTERISTICS
0.35
0.30
0.25
I_C/I_B = 10
150°C
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.4
I_C/I_B = 10
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.1 V_CE = 1 V
1.0
0.9
−55°C
0.8
0.7 _25°C
0.6
0.5
0.4 ^150°C
0.3
0.2
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Voltage vs. Collector
Current
160
10
T_J = 25°C
10 ms
120
1 s ^{100 ms}
1 ms
1.0
Thermal Limit
80
C_ib
 0.1
40
Single Pulse Test
Cob
@ T_A = 25°C
0
0.01
C_ob
- 5.0
-1.0
-1.5
- 2.0
- 2.5
0.1
1.0
10
100
C_ib
-1.0
- 2.0
- 3.0
- 4.0
- 5.0
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
V_R, REVERSE VOLTAGE (VOLTS)
Figure 7. Safe Operating Area
Figure 6. Capacitances
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