BCP56 Datasheet, PDF (3/5 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

1000
V_CE = 2 V
100
BCP56 Series
TYPICAL ELECTRICAL CHARACTERISTICS
T_A = 150°C
125°C
25°C
- 55°C
- 65°C
10
0.1
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1000
100
10
1.0
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 2. Current−Gain − Bandwidth Product
80
60
T_J = 25°C
40
C_ibo
20
10
8.0
6.0
4.0
0.1 0.2
C_obo
0.5 1.0 2.0 5.0 10 20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
50 100
1
I_C/I_B = 10
0.1
150°C
25°C
−55°C
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1
I_C/I_B = 10
1.0
0.9
−55°C
0.8
0.7 25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
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