ATP202 Datasheet, PDF (3/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

ATP202
70
Tc=25°C
60
ID -- VDS
4.5V
50
4.0V
40
30
VGS=3.5V
20
10
0
0
0.5
1.0
1.5
2.0
Drain-to-Source Voltage, VDS -- V IT14012
RDS(on) -- VGS
30
Tc=25°C
Single pulse
25
ID=13A
20
25A
15
10
70
VDS=10V
60
ID -- VGS
50
40
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-to-Source Voltage, VGS -- V IT14013
RDS(on) -- Tc
30
Single pulse
25
20
15
10
VGSV=4G.S5=V1, _{0ID.0=V1,3IAD=25A}
5
0
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V IT14014
| yfs | -- ID
5
VDS=10V
3
2
25^°C
10
7
5
Tc=
--25^°C
75^°C
3
2
1.0
7
5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
7
5 ^VDD=15V
VGS=10V
3
Drain Current, ID -- A
SW Time -- ID
IT14016
2
td(off)
100
7
5
tf
3
tr
2
td(on)
10
7
5
0.1
2 3 5 7 _1.0 2 3 5 7 ₁₀
Drain Current, ID -- A
2 3 57
IT14018
5
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
100
7
5
VGS=0V
IS -- VSD
3 Single pulse
2
IT14015
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Diode Forward Voltage, VSD -- V IT14017
Ciss, Coss, Crss -- VDS
5
f=1MHz
3
2
Ciss
1000
7
5
3
2
100
7
0
Coss
Crss
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V IT14019
No. A1317-3/7