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AMIS42670ICAH2RG Datasheet, PDF (3/10 Pages) ON Semiconductor – High-Speed CAN Transceiver for Long Networks
AMIS−42670
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min.
Max.
Unit
VCC
VCANH
VCANL
VTxD
VRxD
VS
VREF
Vtran(CANH)
Vtran(CANL)
Vesd
Supply Voltage
DC Voltage at Pin CANH
DC Voltage at Pin CANL
DC Voltage at Pin TxD
DC Voltage at Pin RxD
DC Voltage at Pin S
DC Voltage at Pin VREF
Transient Voltage at Pin CANH
Transient Voltage at Pin CANL
Electrostatic Discharge Voltage at All Pins
−0.3
+7
V
0 < VCC < 5.25 V; no time limit
−45
+45
V
0 < VCC < 5.25 V; no time limit
−45
+45
V
−0.3 VCC + 0.3
V
−0.3 VCC + 0.3
V
−0.3 VCC + 0.3
V
−0.3 VCC + 0.3
V
Note 2
−150
+150
V
Note 2
−150
+150
V
Note 3
Note 5
−4
+4
kV
−750
+750
V
Latch−up
Static Latch−up at All Pins
Note 4
100
mA
Tstg
Storage Temperature
−55
+155
°C
TA
Ambient Temperature
−40
+125
°C
TJ
Maximum Junction Temperature
−40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 3).
3. Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
4. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
Rth(vj−a)
Thermal Resistance from Junction−to−Ambient in
SOIC−8 Package
Rth(vj−s)
Thermal Resistance from Junction−to−Substrate
of Bare Die
Conditions
In Free Air
In Free Air
Value
Unit
150
k/W
45
k/W
APPLICATION INFORMATION
VBAT
IN 5V−reg OUT
PC20070831.3
VCC
CAN
controller
GND
60 W 60 W
VCC
S
3
8
7 CANH
RxD
4
AMIS− 5 VREF
42670
TxD
6 CANL
1
2
GND
47 nF
CAN
BUS
60 W 60 W
47 nF
Figure 2. Application Diagram
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