|
AMIS-42675 Datasheet, PDF (3/12 Pages) AMI SEMICONDUCTOR – High-Speed Low Power CAN Transceiver | |||
|
◁ |
AMISâ42675
Table 2. PIN DESCRIPTION
Pin Name
Description
1
TxD Transmit Data Input; Low Input â Dominant Driver; Internal Pullup Current
2
GND Ground
3
VCC Supply Voltage
4
RxD Receive Data Output; Dominant Transmitter â Low Output
5 VSPLIT CommonâMode Stabilization Output
6 CANL LowâLevel CAN Bus Line (Low in Dominant Mode)
7 CANH HighâLevel CAN Bus Line (High in Dominant Mode)
8
STB Standby Mode Control Input
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
VCANH
Supply Voltage
DC Voltage at Pin CANH
0 < VCC < 5.25 V; No Time
Limit
â0.3
â50
+7
V
+50
V
VCANL
DC Voltage at Pin CANL
0 < VCC < 5.25 V; No Time
â50
Limit
+50
V
VSPLIT
DC Voltage at Pin VSPLIT
0 < VCC < 5.25 V; No Time
â50
Limit
+50
V
VTxD
VRxD
VSTB
Vtran(CANH)
Vtran(CANL)
Vtran(VSPLIT)
Vesd(
DC Voltage at Pin TxD
DC Voltage at Pin RxD
DC Voltage at Pin STB
Transient Voltage at Pin CANH
Transient Voltage at Pin CANL
Transient Voltage at Pin VSPLIT
Electrostatic Discharge Voltage at all
Pins
Note 2
Note 2
Note 2
Note 4
Note 5
â0.3
â0.3
â0.3
â300
â300
â300
â5
â750
VCC + 0.3
V
VCC + 0.3
V
VCC + 0.3
V
+300
V
+300
V
+300
V
+5
kV
+750
V
Latchâup
Static Latchâup at All Pins
Note 4
120
mA
Tstg
Storage Temperature
â55
+150
°C
TA
Ambient Temperature
â40
+125
°C
TJ
Maximum Junction Temperature
â40
+170
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 3).
3. Standardized human body model electrostatic discharge (ESD) pulses in accordance to MIL883 method 3015.7.
4. Static latchâup immunity: Static latchâup protection level when tested according to EIA/JESD78.
5. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3â1993.
Table 4. THERMAL CHARACTERISTICS
Symbol
Parameter
Rth(vjâa)
Rth(vjâs)
Thermal Resistance from JunctionâtoâAmbient in SOICâ8 Package
Thermal Resistance from JunctionâtoâSubstrate of Bare Die
Conditions
Value
Unit
In Free Air
145
k/W
In Free Air
45
k/W
http://onsemi.com
3
|
▷ |