AMIS-41682_15 Datasheet, PDF (3/16 Pages) ON Semiconductor – Fault Tolerant CAN Transceiver

AMIS−41682, AMIS−41683
Table 2. PIN DESCRIPTION
Pin
Name
Description
1
INH
Inhibit Output for External Voltage Regulator
2
TxD
Transmit Data Input; Internal Pullup Current
3
RxD
Receive Data Output
4
ERR
Error; Wake−up and Power−on Flag; Active Low
5
STB
Standby Digital Control Input; Active Low; Pulldown Resistor
6
EN
Standby Digital Control Input; Active High; Pulldown Resistor
7
WAKE
Enable Digital Control Input; Falling and Rising Edges are Both Detected
8
RTH
Pin for External Termination Resistor at CANH
9
RTL
Pin for External Termination Resistor at CANL
10
V_CC
5 V Supply Input
11
CANH
Bus Line; High in Dominant State
12
CANL
Bus Line; Low in Dominant State
13
GND
Ground
14
V_BAT
Battery Supply
Table 3. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Max
Unit
V_CC
V_BAT
V_dig
V_CANH−L
V_{tran−CAN}
V_WAKE
V_INH
V_RTH−L
R_RTH
R_RTL
T_J
V_esd
Supply Voltage on Pin V_CC
Battery Voltage on Pin V_BAT
DC Voltage on Pins EN, STB, ERR, TxD, RxD
DC Voltage on Pin CANH, CANL
Transient Voltage on Pins CANH and CANL (Figure 10) (Note 1)
DC Input Voltage on Pin WAKE
DC Output Voltage on Pin INH
DC Voltage on Pin RTH, RTL
Termination Resistance on Pin RTH
Termination Resistance on Pin RTL
Maximum Junction Temperature
Electrostatic discharge voltage (CANH− and CANL Pin)
Human Body Model (Note 2)
−0.3
−0.3
−0.3
−40
−350
−40
−0.3
−40
500
500
−40
−6
+6
V
+40
V
V_CC + 0.3
V
+40
V
+350
V
+40
V
V_BAT + 0.3
V
40
V
16000
W
16000
W
+150
°C
+6
kV
Electrostatic Discharge Voltage (Other Pins) Human Body Model (Note 2)
−2.0
+2.0
kV
Electrostatic Discharge Voltage; CDM (Note 3)
−500
+500
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The applied transients shall be in accordance with ISO 7637 part 1, test pulses 1, 2, 3a, and 3b. Class C operation
2. Human Body Model according Mil−Std−883C−Meth−3015.7
3. Charged Device Model according ESD−STM5.3.1−1999
Table 4. THERMAL CHARACTERISTICS
Symbol
R_{th(vj−a)}
Parameter
Thermal Resistance from Junction−to−Ambient in SSOP−14 Package
(Two Layer PCB)
R_{th(vj−s)}
Thermal Resistance from Junction−to−Substrate of Bare Die
Conditions
Value
Unit
In Free Air
140
K/W
In Free Air
30
K/W
www.onsemi.com
3