74HCT04 Datasheet, PDF (3/7 Pages) ON Semiconductor – Hex Inverter With LSTTL−Compatible Inputs High−Performance Silicon−Gate CMOS

74HCT04
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V_CC DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
V_in DC Input Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
V_out DC Output Voltage (Referenced to GND)
– 0.5 to V_CC + 0.5 V
I_in
DC Input Current, per Pin
±20
mA
I_out DC Output Current, per Pin
±25
mA
I_CC DC Supply Current, V_CC and GND Pins
±50
mA
P_D Power Dissipation in Still Air
SOIC Package†
500
mW
TSSOP Package†
450
T_stg Storage Temperature Range
– 65 to + 150
_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V_in and
V_out should be constrained to the
range GND v (V_in or V_out) v V_CC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V_CC).
Unused outputs must be left open.
T_L Lead Temperature, 1 mm from Case for 10 Seconds
_C
SOIC or TSSOP Package
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max Unit
V_CC DC Supply Voltage (Referenced to GND)
4.5
5.5
V
V_in, V_out DC Input Voltage, Output Voltage (Referenced to GND)
0
V_CC
V
T_A Operating Temperature Range, All Package Types
– 55 + 125 _C
t_r, t_f Input Rise/Fall Time (Figure 1)
0
500
ns
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
V_CC
Guaranteed Limit
(V) −55 to 25°C ≤85°C ≤125°C Unit
V_IH
Minimum High−Level Input Voltage V_out = 0.1V
4.5
|I_out| ≤ 20mA
5.5
V_IL
Maximum Low−Level Input Voltage V_out = V_CC − 0.1V
4.5
|I_out| ≤ 20mA
5.5
V_OH
Minimum High−Level Output
V_in = V_IL
4.5
Voltage
|I_out| ≤ 20mA
5.5
V_in = V_IL
|I_out| ≤ 4.0mA 4.5
V_OL
Maximum Low−Level Output
V_in = V_IH
4.5
Voltage
|I_out| ≤ 20mA
5.5
V_in = V_IH
|I_out| ≤ 4.0mA 4.5
I_in
Maximum Input Leakage Current
V_in = V_CC or GND
5.5
I_CC
Maximum Quiescent Supply
V_in = V_CC or GND
5.5
Current (per Package)
I_out = 0mA
2.0
2.0
0.8
0.8
4.4
5.4
3.98
0.1
0.1
0.26
±0.1
2.0
2.0
2.0
V
2.0
2.0
0.8
0.8
V
0.8
0.8
4.4
4.4
V
5.4
5.4
3.84 3.70
0.1
0.1
V
0.1
0.1
0.33 0.40
±1.0
±1.0
mA
20
40
mA
DI_CC
Additional Quiescent Supply
Current
V_in = 2.4V, Any One Input
≥ −55°C
V_in = V_CC or GND, Other Inputs
I_out = 0mA
5.5
2.9
25 to 125°C
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = I_CC + ΣDI_CC.
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