2SC6096 Datasheet, PDF (3/6 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

2SC6096
hFE -- IC
1000
7
VCE=5V
7
Ta=75°_C
5
5
25°C
3
3
--25°C
2
2
fT -- IC
VCE=10V
100
7
5
3
2
0.01
100
7
5
23
5 7 _0.1
2 3 5 7 _1.0
Collector Current, IC -- A
Cob -- VCB
23
IT11117
f=1MHz
3
2
10
7
5
3
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100
Collector-to-Base Voltage, VCB -- V IT11119
VBE(sat) -- IC
3
IC / IB=10
2
1.0
Ta= --25^°C
7
75^°C
25°^C
5
3
0.01
1.4
1.3
1.2
1.0
0.8
0.6
0.4
0.2
23
5 7 _0.1
2 3 5 7 _1.0
Collector Current, IC -- A
PC -- Ta
23
IT11121
Mounted _{on a ceramic board (250mm 2✕0.8mm)}
0
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11123
100
7
5
3
2
0.01
2 3 5 7 _0.1
2 3 5 7 _1.0
2
Collector Current, IC -- A
IT11118
VCE(sat) -- IC
3
2
IC / IB=10
0.1
7
5
3
Ta=75^°C
2
--25^°C
0.01
25^°C
7
5
3
0.01
23
5
ICP=3A
3
2
IC=2A
1.0
7
5
3
2
5 7 _0.1
2 3 5 7 _1.0
Collector Current, IC -- A
ASO
23
IT11120
<10μs
10ms
0.1
7
5
3
2 _Tc=25°C
0.01 ^{Single Pulse}
0.1 ^{2 3 5 7} 1.0 ^{2 3 5 7} 10 ^{2 3 5 7} 100 ²
Collector-to-Emitter Voltage, VCE -- V IT11122
4.0
PC -- Tc
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80 100 120 140 160
Case Temperature, Tc -- °C
IT11124
No. A0434-3/6