2N6487_14 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
T_A T_C
4.0 80
3.0 60
2.0 40
1.0 20
T_C
T_A
00
0 20 40 60 80 100 120 140 160
T_C, CASE TEMPERATURE (°C)
Figure 1. Power Derating
25 ms
+ 10 V
0
V_CC
+ 30 V
R_C
SCOPE
R_B
- 10 V
t_r, t_f v 10 ns
DUTY CYCLE = 1.0%
51
D₁
-4V
R_B AND R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
D₁ MUST BE FAST RECOVERY TYPE, e.g.:
 1N5825 USED ABOVE I_B [ 100 mA
 MSD6100 USED BELOW I_B [ 100 mA
Figure 2. Switching Time Test Circuit
1000
500
t_r
200
100
50
NPN
PNP
t_d @ V_BE(off) [ 5.0 V
20
T_C = 25°C
V_CC = 30 V
10 ^{IC/IB = 10}
0.2
0.5
1.0
2.0
5.0
10 20
I_C, COLLECTOR CURRENT (AMP)
Figure 3. Turn−On Time
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02
0.01 _{SINGLE PULSE}
0.01
0.01 0.02
0.05 0.1 0.2
Z_qJC (t) = r(t) R_qJC
P_(pk)
R_qJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) Z_qJC(t)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
Figure 4. Thermal Response
50 100 200
500 1.0 k
http://onsemi.com
3