2N6040 Datasheet, PDF (3/8 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,80W)

2N6040 2N6042 2N6043 2N6045
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1 _0.05
0.07
0.05 ^0.02
0.03 _{SINGLE PULSE} 0.01
0.02
0.01
0.01 0.02 0.03 0.05 0.1
θ_JC(t) = r(t) θ_JC
P(pk)
θ_JC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θ_JC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
100 200 300 500 1000
20
10
5.0
500 µs
2.0
1.0
TJ = 150°C
1.0Ăms
5.0Ăms
dc
BONDING WIRE LIMITED
0.5
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
0.2
SECOND BREAKDOWN LIMITED
0.1 ^{CURVES APPLY BELOW RATED VCEO}
2N6040, 2N6043
0.05
2N6045
100 µs
0.02
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0 2.0
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
5.0 10 20
50 100 200
f, FREQUENCY (kHz)
500 1000
Figure 6. Small–Signal Current Gain
300
TJ = 25°C
200
Cob
100
70
Cib
50
PNP
NPN
30
0.1 0.2
0.5 1.0 2.0
5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
50 100
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