2N3771 Datasheet, PDF (3/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(150W)

1.0
0.7 _{D = 0.5}
0.5
0.3 _0.2
0.2
0.1
0.1 _0.05
0.07
0.05
0.02
0.03
0.01
0.02 ^{SINGLE PULSE}
0.01
0.02
0.05 0.1 0.2
2N3771 2N3772
θ_JC(t) = r(t) θ_JC
P(pk)
θ_JC = 0.875°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θ_JC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0
10 20
t, TIME (ms)
50 100 200
500 1000 2000
Figure 2. Thermal Response — 2N3771, 2N3772
40
30
2N3771
20
2N3772, (dc)
dc
40 µs
100 µs
10
TC = 25°C
7.0
BONDING WIRE LIMITED
THERMALLY LIMITED
5.0
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
3.0 _{PULSE CURVES APPLY}
2N3771
FOR ALL DEVICES
2.0
2N3772
1.0
2.0 3.0 5.0 7.0 10
20 30
200 µs
1.0 ms
100 ms
500 ms
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 3. Active–Region Safe Operating Area
— 2N3771, 2N3772
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
Figure 3 is based on JEDEC registered Data. Second
breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) < 200_C. TJ(pk) may be calculated from the
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, TJ(pk) will be found to be less than TJ(max)
for pulse widths of 1 ms and less. When using Motorola
transistors, it is permissible to increase the pulse power limits
until limited by TJ(max).
VCC
+ 30 V
25 µs
+11 V
RC
SCOPE
RB
0
51
D1
– 9.0 V
tr, tf ≤ 10 ns
–4 V
DUTY CYCLE = 1.0%
RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Figure 4. Switching Time Test Circuit
10
5.0 ^{VCC = 30}
IC/IB = 10
2.0 TJ = 25°C
VBE(off) = 5.0 V
1.0
0.5
tr
0.2
0.1
0.05
td
0.02
0.01
0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 5. Turn–On Time
20 30
Motorola Bipolar Power Transistor Device Data
3