TIP35A Datasheet, PDF (2/6 Pages) Motorola, Inc – COMPLEMENTARY SILICON POWER TRANSISTORS

TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 30 mA, IB = 0)}
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 30 V, IB = 0)
(VCE = 60 V, IB = 0)
TIP35A, TIP36A
TIP35B, TIP35C, TIP36B, TIP36C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–EmitterCutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VCE = Rated VCEO, VEB = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(VEB = 5.0 V, IC = 0)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS (1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 1.5 A, VCE = 4.0 V)}
(IC = 15 A, VCE = 4.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Saturation Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 15 A, IB = 1.5 A)}
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(IC = 25 A, IB = 5.0 A)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter On Voltage
(IC = 15 A, VCE = 4.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 25 A, VCE = 4.0 V)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DYNAMIC CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Small–Signal Current Gain}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current–Gain — Bandwidth Product
(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{v (1) PulseTest:PulseWidth=300µs, Duty Cycle 2.0%.}
Symbol
Min
VCEO(sus)
60
80
100
ICEO
—
—
ICES
—
IEBO
—
Max
Unit
Vdc
—
—
—
mA
1.0
1.0
0.7
mA
1.0
mA
hFE
25
15
VCE(sat)
—
—
VBE(on)
—
—
hfe
25
fT
3.0
—
—
75
Vdc
1.8
4.0
Vdc
2.0
4.0
—
—
—
MHz
TURN–ON TIME
VCC – 30 V
RL 3.0
+ 2.0 V
0
tr ≤
20 ns
10
RB
–11.0 V
10 TO 100 µS
TO SCOPE
tr ≤ 20 ns
DUTY CYCLE ≈ 2.0%
TURN–OFF TIME
+ 9.0 V
VCC – 30 V
RL 3.0
0
–11.0 V
10
RB
tr ≤ 20 ns
10 to 100 µs
VBB + 4.0 V
TO SCOPE
tr ≤ 20 ns
DUTY CYCLE ≈ 2.0%
FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
Figure 2. Switching Time Equivalent Test Circuits
2.0
TJ = 25°C
1.0
IC/IB = 10
0.7
VCC = 30 V
0.5
VBE(off) = 2 V
0.3
tr
0.2
0.1
td
0.07
0.05
(PNP)
(NPN)
0.03
0.02
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (AMPERES)
20 30
Figure 3. Turn–On Time
2
Motorola Bipolar Power Transistor Device Data